6533b830fe1ef96bd129789a

RESEARCH PRODUCT

Structure and properties of epitaxial ferroelectric PbLu0.5Nb0.5O3thin films

Seppo LeppävuoriM. TyunianJ. LevoskaAndris Sternberg

subject

PermittivityCrystalMaterials scienceCondensed matter physicsSubstrate (electronics)Thin filmCondensed Matter PhysicsEpitaxyFerroelectricityElectronic Optical and Magnetic MaterialsPerovskite (structure)Pulsed laser deposition

description

Abstract Epitaxial thin film heterostructures of PbLu0.5Nb0.5O3 (PLuN) and La0.5Sr0.5CoO3 (LSCO) were deposited by in situ pulsed laser ablation onto MgO and LaAlO3 (100) substrates. The formation of crystalline phases, epitaxy, film-electrode-substrate orientation relationships, crystal perfection and chemical order were studied by x-ray diffraction. The structural properties were found to depend on the deposition conditions and on the substrate. The perovskite PLuN films were pseudocubic and epitaxial, with (001) planes parallel to the substrate surface. At room temperature, Au/PLuN/LSCO capacitors exhibited ferroelectric behavior and zero-field dielectric permittivity about e ≅ 210–260, approximately three times higher than in ceramics. A diffuse peak in e(T) was observed around 100°C, about 150°C below the sharp PE-AFE transition in bulk ceramics. The lower degree of chemical order in the films was considered to be an important factor in the different behavior of thin films and bulk ceramics.

yearjournalcountryeditionlanguage
2001-01-01Ferroelectrics
https://doi.org/10.1080/00150190108008676