6533b831fe1ef96bd12984b7

RESEARCH PRODUCT

Electric-field-induced Raman scattering in GaAs: Franz-Keldysh oscillations

Andrés CantareroT. RufMartin KuballClemens UlrichManuel CardonaNorbert EsserKarl EberlAlberto García-cristóbal

subject

Physicssymbols.namesakeX-ray Raman scatteringCondensed matter physicsPhonon scatteringScatteringPhononsymbolsCoherent anti-Stokes Raman spectroscopyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectRaman spectroscopyExcitationRaman scattering

description

We have studied the influence of strong electric fields on the Raman scattering intensity from LO phonons in GaAs (100) at room temperature using laser excitation energies above the fundamental ${\mathit{E}}_{0}$ gap. Striking oscillations are found in the scattering intensity for configurations where either the deformation potential or Fr\"ohlich electron-phonon interaction contribute. The oscillations in the deformation-potential-mediated scattering intensity can be related to Franz-Keldysh oscillations derived from the ${\mathit{E}}_{0}$ gap, whereas a more complicated mechanism has to be invoked for processes where Fr\"ohlich interaction is responsible.

yearjournalcountryeditionlanguage
1995-03-15Physical Review B
https://doi.org/10.1103/physrevb.51.7353