0000000000247000
AUTHOR
Martin Kuball
showing 6 related works from this author
On-line tools for microscopic and macroscopic monitoring of microwave processing
2007
International audience; Direct monitoring of temperature, chemistry and microstructure is required to understand microwave heating in more detail, in order to fully exploit the unique features this non-equilibrium processing method can offer. In this paper, we show first that microwave radiometry can be used to follow volumetrically the thermal trajectory of microwave-heated aluminium powder. In-situ Raman spectroscopy is then shown to evidence thermal gradients between diamond and silicon grains in a binary powder mixture. Finally, perspectives and preliminary results of microstructural analysis obtained from X-ray microtomography are presented.
Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals
2003
ABSTRACTRaman scattering and photoluminescence (PL) spectroscopy with sub-bandgap excitation has been applied to explore tracing of common impurities (in particular of oxygen) in AlN. Bulk AlN crystals grown by the high temperature sublimation method were studied. PL bands have been observed at around 375 nm and at 560–660 nm and have been attributed to oxygen and to nitrogen vacancy/aluminium excess defects, respectively. The 375 nm UV PL band was found to shift with oxygen concentration. Micro-Raman spectra of the bulk AlN samples were measured in different polarisations. Besides normal Raman modes of AlN the presence of additional vibrational modes was detected. The modes were discussed …
Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors
2008
Raman spectra of aluminum nitride (AlN) under pressure have been measured up to $25\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$, i.e., beyond the onset of the wurtzite-to-rocksalt phase transition around $20\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$. The experimental pressure coefficients for all the Raman-active modes of the wurtzite phase are reported and compared to those obtained from ab initio lattice dynamical calculations, as well as to previous experimental and theoretical results. The pressure coefficients of all the Raman-active modes in wurtzite-type semiconductors (AlN, GaN, InN, ZnO, and BeO), as well as the relatively low bulk modulus and phase transition pressure in wurtzite AlN, a…
Electric-field-induced Raman scattering in GaAs: Franz-Keldysh oscillations
1995
We have studied the influence of strong electric fields on the Raman scattering intensity from LO phonons in GaAs (100) at room temperature using laser excitation energies above the fundamental ${\mathit{E}}_{0}$ gap. Striking oscillations are found in the scattering intensity for configurations where either the deformation potential or Fr\"ohlich electron-phonon interaction contribute. The oscillations in the deformation-potential-mediated scattering intensity can be related to Franz-Keldysh oscillations derived from the ${\mathit{E}}_{0}$ gap, whereas a more complicated mechanism has to be invoked for processes where Fr\"ohlich interaction is responsible.
Resonant Raman characterization of InAlGaN/GaN heterostructures
2006
InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In x Al y Ga 1-x-y N. It is shown that the addition of In to the Al y Ga 1-y N alloy diminishes considerably the vibration energy of the A 1 (LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In x Al y Ga 1-x-y N layer.…
InN thin film lattice dynamics by grazing incidence inelastic x-ray scattering.
2011
Achieving comprehensive information on thin film lattice dynamics so far has eluded well established spectroscopic techniques. We demonstrate here the novel application of grazing incidence inelastic x-ray scattering combined with ab initio calculations to determine the complete elastic stiffness tensor, the acoustic and low-energy optic phonon dispersion relations of thin wurtzite indium nitride films. Indium nitride is an especially relevant example, due to the technological interest for optoelectronic and solar cell applications in combination with other group III nitrides.