6533b832fe1ef96bd129ae12

RESEARCH PRODUCT

On the noise resistance of field-effect transistors at microwave frequencies

Alina CaddemiNicola Donato

subject

PhysicsNoise temperaturebusiness.industryGeneral MathematicsNoise spectral densityAcousticsGeneral Physics and AstronomyY-factorNoise figureBurst noiseNoiseNoise generatorFlicker noiseTelecommunicationsbusiness

description

This paper presents a survey on the topical aspects of the noise resistance in field-effect transistors (FET) at microwave frequencies. Such noise parameter represents the sensitivity of the device noise figure to the departure from the minimum noise condition and is therefore important in all low-noise applications. The performance of the noise resistance in FETs has been reviewed since the first noise modeling analysis of short-gate devices were presented in the early '70s. The authors also comment and compare their own results on this subject as obtained by extensive experimental activity in the field of noisy device characterization vs. frequency, bias and temperature conditions.

yearjournalcountryeditionlanguage
2001-09-01
10.1142/s0219477501000342http://hdl.handle.net/11570/1607190