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RESEARCH PRODUCT
Spin-orbit torques from interfacial spin-orbit coupling for various interfaces
Kyoung-whan KimKyoung-whan KimKyoung-whan KimKyung Jin LeeHyun-woo LeeMark D. StilesJairo SinovaJairo Sinovasubject
PhysicsCondensed Matter - Materials ScienceCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed matter physicsMagnetoresistanceSpin polarizationScatteringMagnetismMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technologySpin–orbit interaction021001 nanoscience & nanotechnology01 natural sciencesArticleFerromagnetismTopological insulator0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)PerpendicularCondensed Matter::Strongly Correlated Electrons010306 general physics0210 nano-technologydescription
We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-07-31 |