6533b836fe1ef96bd12a1272
RESEARCH PRODUCT
Decomposition of peroxy radicals in SiO 2 glass with X‐rays or KrF laser light
Hideo HosonoKoichi KajiharaLinards SkujaMasahiro Hiranosubject
SiliconchemistryRadicalKineticsRadiolysisDangling bondchemistry.chemical_elementMoleculePhotochemistryOxygenDissociation (chemistry)description
Decomposition of the peroxy radical (POR) was examined for wet SiO 2 glasses exposed to X-rays from a Rh-target tube or KrF laser light. The exposure to KrF laser light destroys POR resulting in the selective formation ofthe oxygen dangling bond (termed "non-bridging oxygen hole center", NBOHC). In contrast, the exposure to X-rays creates both the silicon dangling bond (E' center) and NBOHC on bleaching of POR. Clear mutual correlation is found between the formation kinetics of the interstitial oxygen molecule (O 2 ) and of the Si-Si bond but not between those of O 2 and the E' center. These observations indicate that O 2 is created mainly from the radiolysis of the Si-O-Si bond by the Frenkel mechanism rather than by the dissociation of the Si-O bond in POR. It is concluded that both of KrF laser light and X-rays primarily dissociate the O-O bond in POR.
year | journal | country | edition | language |
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2005-01-01 | physica status solidi (c) |