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RESEARCH PRODUCT
Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors
Jani HämäläinenEsa PuukilainenMiia MäntymäkiMikko RitalaMarkku LeskeläTimo Sajavaarasubject
010302 applied physicsMaterials scienceta214ta114Band gapGeneral Chemical EngineeringAnalytical chemistryLithium fluoride02 engineering and technologyGeneral ChemistryAtmospheric temperature range021001 nanoscience & nanotechnology01 natural sciencesElastic recoil detectionchemistry.chemical_compoundAtomic layer depositionchemistryImpurity0103 physical sciencesMaterials ChemistryThin film0210 nano-technologySpectroscopydescription
Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300–350 °C. The films were studied by UV–vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was tested by a Scotch tape test. This method results in LiF films with a growth rate of approximately 1.4 A per cycle. According to the ToF-ERDA measurements, the films are pure LiF with very small Mg and Ti impurities, the largest impurity being hydrogen with contents below 1 atom %.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-04-10 | Chemistry of Materials |