6533b853fe1ef96bd12ac0e4

RESEARCH PRODUCT

Single-Event Burnout Mechanisms in SiC Power MOSFETs

Arthur F. WitulskiDennis R. BallJean-marie LauensteinArto JavanainenAndrew L. SternbergKenneth F. GallowayRonald D. Schrimpf

subject

Nuclear and High Energy PhysicsMaterials sciencesingle-event burnoutpower MOSFETs01 natural sciencesdevice simulationselektroniikkakomponentitchemistry.chemical_compoundsilicon carbide0103 physical sciencesMOSFETSilicon carbideElectrical and Electronic EngineeringPower MOSFETheavy ions010302 applied physicspower devicesta114ta213010308 nuclear & particles physicsbusiness.industryionisoiva säteilyBipolar junction transistorsingle event effectsThreshold voltageImpact ionizationsäteilyfysiikkaNuclear Energy and EngineeringchemistrytransistoritOptoelectronicsbusinessCurrent densityVoltage

description

Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed

yearjournalcountryeditionlanguage
2018-08-01IEEE Transactions on Nuclear Science
https://doi.org/10.1109/tns.2018.2849405