6533b853fe1ef96bd12ad4ab
RESEARCH PRODUCT
Study of the recombination around the excitonic region of MBE ZnSe:Cl thin films
I. Hernández-calderónAndrés CantareroRoberto Ortega-martínezNúria GarroMiguel García-rochaA. E. Martínez-cantónsubject
Nuclear magnetic resonanceQuenching (fluorescence)Materials sciencePhotoluminescenceExcitonDopingGeneral EngineeringAnalytical chemistryActivation energyThin filmExponential decayMolecular beam epitaxydescription
The recombination processes around the excitonic region of undoped ZnSe and chlorine doped ZnSe thin films were studied by continuous-wave photoluminescence (cw-PL) and time-resolved photoluminescence (TRPL) spectroscopies. Samples with different chlorine concentration were obtained by varying the temperature of the Cl source. The evolution of the PL signal and its decay time were analyzed as a function of temperature. Activation energy (Ea) values associated to the quenching of the D0X and band-to-band emission were obtained from the temperature dependent cw-PL experiments. The activation energy was lower for the film with higher Cl content. The characteristic exponential decay time (TPL) of the PL signal decreased with increasing Cl concentration.
year | journal | country | edition | language |
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2008-03-01 | Microelectronics Journal |