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RESEARCH PRODUCT
Development of an MeV ion beam lithography system in Jyväskylä
Sergey GorelickTommi YlimäkiTimo SajavaaraMikko LaitinenA. Sagari A.r.Harry J. Whitlowsubject
Nuclear and High Energy PhysicsBeam diameterIon beamChemistrybusiness.industryIon beam lithographyFocused ion beamProton beam writingIon beam depositionOpticsPhysics::Plasma PhysicsPhysics::Accelerator PhysicsLaser beam qualityAtomic physicsNuclear ExperimentbusinessInstrumentationBeam (structure)description
Abstract A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyvaskyla cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5–500 μm side with protons up to 6 MeV and heavy ions (20Ne, 85Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-07-01 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |