6533b856fe1ef96bd12b30fa
RESEARCH PRODUCT
The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures.
D. CamachoRafael MataBruno DaudinAna CrosCatherine BougerolYann-michel NiquetR. Songmuangsubject
Materials scienceBioengineering02 engineering and technologyNitride01 natural sciencessymbols.namesake0103 physical sciencesMicroscopyGeneral Materials ScienceElectrical and Electronic EngineeringHigh-resolution transmission electron microscopySpectroscopyComputingMilieux_MISCELLANEOUS010302 applied physicsbusiness.industryMechanical EngineeringHeterojunctionGeneral Chemistry021001 nanoscience & nanotechnologyCrystallographic defectMechanics of MaterialsTransmission electron microscopysymbols[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Optoelectronics0210 nano-technologybusinessRaman spectroscopydescription
The strain state of 1 and 2.5 nm thick GaN insertions in GaN/AlN nanocolumn heterostructures has been studied by means of a combination of high resolution transmission electron microscopy, Raman spectroscopy and theoretical modeling. It is found that 2.5 nm thick GaN insertions are partially relaxed, which has been attributed to the presence of dislocations in the external AlN capping layer, in close relationship with the morphology of GaN insertions and with the AlN capping mechanism. The observed plastic relaxation in AlN is consistent with the small critical thickness expected for GaN/AlN radial heterostructures.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-01-01 | Nanotechnology |