6533b857fe1ef96bd12b4dff

RESEARCH PRODUCT

Traces of errors due to single ion in floating gate memories

Giorgio CellereReno Harboe-sorensenAngelo ViscontiAri VirtanenAlessandro PaccagnellaM. Bonanomi

subject

PhysicsNon-volatile memoryOpticsbusiness.industryGate arrayTrack (disk drive)Logic gateElectrical engineeringbusinessFlash memoryDegradation (telecommunications)IonThreshold voltage

description

Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage of all those FGs interested by its track will be degraded.

yearjournalcountryeditionlanguage
2008-06-012008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial
https://doi.org/10.1109/icicdt.2008.4567285