6533b859fe1ef96bd12b7701

RESEARCH PRODUCT

Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories?

Simone GerardinAlessandro PaccagnellaGiorgio CellereReno Harboe-sorensenAngelo ViscontiS. BeltramiPhilippe RocheAri VirtanenM. BonanomiMarta Bagatin

subject

Engineeringbusiness.industryNAND FlashElectrical engineeringNAND gateIntegrated circuitCircuit reliabilityChipsingle event effectsFlash memoryElectronic Optical and Magnetic Materialslaw.inventionNon-volatile memorySoft errorlawLogic gateFloating gate memoriesElectronic engineeringradiation effectsElectrical and Electronic Engineeringbusinessradiation effects; Floating gate memories; single event effects; NAND Flash

description

Atmospheric neutrons can interact with the matter inside a microelectronic chip and generate ionizing particles, which in turn can change the state of one or more memory bits [soft error (SE)]. In this letter, we show that SEs are possible in Flash memories, although with extremely low probabilities. While this problem will increase for future technologies, we do not expect SEs to be the reliability limiting factor for further floating gate scaling.

yearjournalcountryeditionlanguage
2009-02-01
10.1109/led.2008.2009885http://hdl.handle.net/11577/2441073