6533b85afe1ef96bd12b89a4
RESEARCH PRODUCT
Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films
Joachim BarthClaudia FelserChristian MixMichael SchwallBenjamin BalkeYves IdzerdaTino JaegerGerhard JakobXeniya KozinaMartin Finsterbuschsubject
DiffractionMaterials scienceCondensed matter physicsMetals and AlloysSurfaces and InterfacesSputter depositionEpitaxySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsThermal conductivityElectrical resistivity and conductivitySeebeck coefficientThermoelectric effectMaterials ChemistryThin filmdescription
Abstract Due to their exceptional thermoelectric properties Half-Heusler alloys like MNiSn (M = Ti,Zr,Hf) have moved into focus. The growth of single crystalline thin film TiNiSn and Zr 0.5 Hf 0.5 NiSn by dc magnetron sputtering is reported. Seebeck and resistivity measurements were performed and their dependence on epitaxial quality is shown. Seebeck coefficient, specific resistivity and power factor for Zr 0.5 Hf 0.5 NiSn at room temperature were measured to be 63 μV K − 1 , 14.1 μΩ m and 0.28 mW K − 2 m − 1 , respectively. Multilayers of TiNiSn and Zr 0.5 Hf 0.5 NiSn are promising candidates to increase the thermoelectric figure-of-merit by decreasing thermal conductivity perpendicular to the interfaces. The epitaxial growth of multilayers containing TiNiSn and Zr 0.5 Hf 0.5 NiSn is demonstrated by measuring satellite peaks in the X-ray diffraction pattern originating from the additional symmetry perpendicular to the film surface.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-11-01 | Thin Solid Films |