6533b85afe1ef96bd12b8aea

RESEARCH PRODUCT

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

Martin ValloHolger KalischMichael HeukenNúria GarroMatthias FinkenAndrés CantareroBartosz FoltynskiAndrei VescanC. Giesen

subject

Materials sciencePhotoluminescenceScanning electron microscopebusiness.industryNanotechnologyChemical vapor depositionCondensed Matter PhysicsSilaneInorganic ChemistryCrystalFull width at half maximumsymbols.namesakechemistry.chemical_compoundchemistryMaterials ChemistrysymbolsOptoelectronicsMetalorganic vapour phase epitaxybusinessRaman spectroscopy

description

Abstract In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiN x /Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 ¯ 1 } planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm −1 ) with crystal quality comparable to bulk crystals (FWHM=4.2±1 cm −1 ). Such GaN microrods might be used as a next-generation device concept for solid-state lighting (SSL) applications by realizing core-shell InGaN/GaN multi-quantum wells (MQWs) on the n -GaN rod base.

yearjournalcountryeditionlanguage
2015-03-01Journal of Crystal Growth
https://doi.org/10.1016/j.jcrysgro.2014.10.047