6533b85bfe1ef96bd12bb3b6
RESEARCH PRODUCT
Detection of planar defects caused by ion irradiation in Si using molecular dynamics
Gerhard BetzHarry J. WhitlowSachiko T. Nakagawasubject
Materials scienceIon beamPixel mappingSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsSurfaces Coatings and FilmsIonMolecular dynamicsPlanarMaterials ChemistryIrradiationCrystalline siliconArea densityAtomic physicsdescription
We have analyzed the evolution of defects caused by self-irradiation of crystalline silicon. A classical molecular dynamics simulation was followed by defect analysis using the Pixel Mapping (PM) method. The PM identified {311} planar defects and long-chain structures of the so-called interstitial chains following low energy (1 keV) ion impact. The areal density obtained from simulation of self-interstitial atoms was about two thirds of that of experiments reported in the literature [Jpn. J. Appl. Phys. 30 (1991) L639], while the atomic configuration on respective planes agreed exactly.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-08-01 | Surface and Coatings Technology |