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RESEARCH PRODUCT
Resonant hyper-Raman scattering in semiconductors: Excitonic effects
Andrés CantareroAlberto García-cristóbalCarlos Trallero-ginerManuel Cardonasubject
PhysicsCondensed matter physicsPhonon scatteringScatteringScattering lengthMott scatteringInelastic scatteringCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsResonant inelastic X-ray scatteringX-ray Raman scatteringPhysics::Atomic PhysicsScattering theoryElectrical and Electronic Engineeringdescription
Abstract A theoretical model of resonant hyper-Raman scattering involving two incident photons of frequency ωL is developed. The model is valid for energies 2ℏωL around the absorption edge of the semiconductor, and takes into account Wannier excitons as intermediate states in the scattering process. Both deformation potential and Frohlich interaction are included in the model: It is found that Frohlich-mediated scattering is a dipole-allowed process, in contrast to one-phonon Raman scattering, where the Frohlich mechanism is dipole-forbidden. We have performed numerical calculations of the resonance profile (hyper-Raman cross-section versus 2ℏωL) and applied our model to materials with dipole-allowed and dipole-forbidden optical transitions.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1999-03-01 | Physica B: Condensed Matter |