0000000000002142
AUTHOR
Carlos Trallero-giner
showing 11 related works from this author
Resonant hyper-Raman scattering in spherical quantum dots
1998
A theoretical model of resonant hyper-Raman scattering by an ensemble of spherical semiconductor quantum dots has been developed. The electronic intermediate states are described as Wannier-Mott excitons in the framework of the envelope function approximation. The optical polar vibrational modes of the nanocrystallites (vibrons) and their interaction with the electronic system are analized with the help of a continuum model satisfying both the mechanical and electrostatic matching conditions at the interface. An explicit expression for the hyper-Raman scattering efficiency is derived, which is valid for incident two-photon energy close to the exciton resonances. The dipole selection rules f…
Energy levels of a quantum ring in a lateral electric field
2002
Abstract The electronic states of a semiconductor quantum ring (QR) under an applied lateral electric field are theoretically investigated and compared with those of a quantum disk of the same size. The eigenstates and eigenvalues of the Hamiltonian are obtained from a direct matrix diagonalization scheme. Numerical calculations are performed for a hard-wall confinement potential and the electronic states are obtained as a function of the electric field and the ratio r2/r1, where r2 (r1) is the outer (inner) radius of the ring. The effects of decreasing symmetry and mixing on the energy levels and wave functions due to the applied electric field are also studied. The direct optical absorpti…
Optical phonons and electron-phonon interaction in quantum wires.
1993
A unified macroscopic continuum theory for the treatment of optical-phonon modes in quantum-wire structures is established. The theory is based on a Lagrangian formalism from which the equations of motion are rigorously derived. They consist of four coupled second-order differential equations for the vibrational amplitude and electrostatic potential. The matching boundary conditions are obtained from the fundamental equations. It is shown that no incompatibility exists between mechanical and electrostatic matching boundary conditions when a correct mathematical treatment of the problem is given. The particular case of a GaAs quantum wire buried in AlAs, where the phonons can be considered c…
Resonant Raman scattering in quantum wells in high magnetic fields: Deformation-potential interaction.
1992
A theoretical study of one-phonon resonant Raman scattering in a quantum well (QW) in high magnetic fields has been performed. The Raman profiles are calculated as a function of magnetic field, quantum-well thickness, and laser frequency. The basic theory is first developed assuming parabolic masses in the plane perpendicular to the growth direction of the QW. Selection rules for deformation-potential-allowed scattering are given and a compact analytical expression for the Raman-scattering efficiency is obtained for infinite barriers. The double-resonance conditions are derived as a function of the magnetic field or well thickness. In a second part of the work, the heavy-hole\char21{}light-…
Excitonic model for second-order resonant Raman scattering.
1994
A theoretical model for second-order resonant Raman scattering is presented. The effect of Coulomb interaction between electrons and holes is fully taken into account in the framework of the effective-mass approximation. By introducing discrete and continuous excitonic intermediate states in the Raman process, an explicit expression for the Raman scattering efficiency is given for long-range Fr\"ohlich electron-phonon interaction. The model developed can be used to evaluate Raman profiles around the resonant region. A closed-form expression for all matrix elements of the exciton-phonon interaction is obtained once the Coulomb problem for the relative electron-hole motion is separated in sph…
Two-LO-Phonon Resonant Raman Scattering in II-VI Semiconductors
1996
Recently, absolute values of socond-order Raman scattering efficiency have been measured around the E 0 and E 0 + Δ 0 critical points of several II-VI semiconductor compounds. The measurements were perfomed in the z(x,x)z backscattering configuration on (001) (ZnSe and ZnTe) and (110) (CdTe) surfaces. They show strong incoming and outgoing resonances around the baud gap and larger scattering efficiencies as compaered to III-V compounds. A theoretical model which includes excitons as intermediate states in the Raman process is shown to give a very good quantitative agreement between theory and experiment. Only a small discrepancy exists, while III-V compounds the discrepancies were close to …
Optical Phonons in Quasi-One Dimensional Semiconductors
1993
A lagrangian formalism is systematically established for the treatment of long wavelength polar optical oscillations in quantum wires modeling the system as a macroscopic continuum. Fundamental equations for the vector displacement u and the electric potential ϕ are rigorously derived in the form of four coupled second order partial differential equations. Matching boundary conditions at the interfaces are also rigorously deduced from the fundamental equations and it is proved that no incompatibility between the mechanical and electrostatic matching boundary conditions exists. The case of AlAs-GaAs quantum wires with cylindrical symmetry is discussed.
Resonant hyper-Raman scattering in semiconductors
1998
A theoretical model for resonant hyper-Raman scattering by LO phonons is developed, taking into account excitonic effects. The model is valid for energies below and above an allowed absorption edge. The matrix elements corresponding to the exciton-photon and exciton-phonon interactions are derived analytically, and their contributions to the total scattering efficiency are analyzed. The two main electron-phonon interaction mechanisms present in polar semiconductors, deformation potential, and Fr\"ohlich interaction, are considered. It is shown that the one-phonon resonance hyper-Raman scattering mediated by the deformation potential interaction is dipole forbidden, whereas it is allowed whe…
Excitonic effects in two-LO-phonon resonant Raman scattering.
1993
Abstract The role of electron-hole correlation in resonant Raman scattering by two LO-phonons is analyzed. A theoretical model including excitons belonging to the discrete and continuous spectra as virtual intermediate states in the Raman process and valid for incident energies below and above the gap is developed. For the exciton-phonon coupling the Frohlich Hamiltonian is considered. The most important contribution to the Raman scattering efficiency corresponds to the continuous→discrete→discrete exciton transition, followed by the discrete→discrete→discrete and the continuous→continuous→discrete ones. The model is tested for GaP, where the scattering efficiency data are available around …
Resonant hyper-Raman scattering in semiconductors: Excitonic effects
1999
Abstract A theoretical model of resonant hyper-Raman scattering involving two incident photons of frequency ωL is developed. The model is valid for energies 2ℏωL around the absorption edge of the semiconductor, and takes into account Wannier excitons as intermediate states in the scattering process. Both deformation potential and Frohlich interaction are included in the model: It is found that Frohlich-mediated scattering is a dipole-allowed process, in contrast to one-phonon Raman scattering, where the Frohlich mechanism is dipole-forbidden. We have performed numerical calculations of the resonance profile (hyper-Raman cross-section versus 2ℏωL) and applied our model to materials with dipo…
Electronic structure of a quantum ring in a lateral electric field
2001
The electronic states of novel semiconductor quantum rings (QR's) under applied lateral electric fields are theoretically investigated for different values of the ratio ${r}_{2}{/r}_{1},$ where ${r}_{2}$ ${(r}_{1})$ is the outer (inner) radius of the ring. The eigenstates and eigenvalues of the Hamiltonian are obtained from a direct matrix diagonalization scheme. Numerical calculations are performed for a hard-wall confinement potential and the electronic states are obtained as a function of the electric field and the ratio ${r}_{2}{/r}_{1}.$ An anomalous behavior in the energy vs. electric-field fan plot due to the break of symmetry is predicted. Analytical expressions for the energy level…