6533b85dfe1ef96bd12be8b3
RESEARCH PRODUCT
Experimental Investigation of the Optimal Ingot Resistivity for both the Cell Performances and the Temperature Coefficients for Different Cell Architectures.
Jan Ove OddenCharly BerthodSissel Tind Sondergaardsubject
Materials scienceSilicon020209 energyBulk resistivitychemistry.chemical_element02 engineering and technologyConductivity021001 nanoscience & nanotechnologyTemperature measurementchemistryElectrical resistivity and conductivity0202 electrical engineering electronic engineering information engineeringIngotComposite material0210 nano-technologyConstant (mathematics)Temperature coefficientdescription
Compensation engineering enables the achievement of lower ingot resistivities with relatively constant performances along the ingot height. In this paper the impact of the bulk resistivity on the cell performances and the temperature coefficients is investigated for compensated and non-compensated multicrystalline silicon. Based on experimental data we show that reducing the bulk resistivity below a certain value improves the temperature coefficients but deteriorates the cell performances for two distinct cell architectures (AI-BSF and PERCT). Moreover this performance loss is not balanced out by the improved temperature coefficient for operating conditions below 70°C.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-06-01 |