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RESEARCH PRODUCT

Structural Diversity and Physical Properties of Paramagnetic Molecular Conductors Based on Bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) and the Tris(chloranilato)ferrate(III) Complex

Maria Laura MercuriAngela SerpeNarcis AvarvariFlavia PopMatteo AtzoriPascale Auban-senzierEnric CanadellPaola DeplanoFlavia ArtizzuCarlos J. Gómez-garcía

subject

TrisChemistryInorganic chemistryCrystal structureConductivityInorganic ChemistrySolventCrystallographychemistry.chemical_compoundParamagnetismMolecule[CHIM]Chemical SciencesPhysical and Theoretical ChemistryStoichiometryTetrathiafulvalene

description

International audience; Electrocrystallization of bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) in the presence of the tris(chloranilato)ferrate(III) [Fe(Cl2An)3]3– paramagnetic chiral anion in different stoichiometric ratios and solvent mixtures afforded three different hybrid systems formulated as [BEDT-TTF]3[Fe(Cl2An)3]·3CH2Cl2·H2O (1), δ-[BEDT-TTF]5[Fe(Cl2An)3]·4H2O (2), and α‴-[BEDT-TTF]18[Fe(Cl2An)3]3·3CH2Cl2·6H2O (3). Compound 1 presents an unusual structure without the typical alternating organic and inorganic layers, whereas compounds 2 and 3show a segregated organic–inorganic crystal structure where layers formed by Λ and Δ enantiomers of the paramagnetic complex, together with dicationic BEDT-TTF dimers, alternate with layers where the donor molecules are arranged in the δ (2) and α‴ (3) packing motifs. Compound 1 behaves as a semiconductor with a much lower conductivity due to the not-layered structure and strong dimerization between the fully oxidized donors, whereas 2and 3 show semiconducting behaviors with high room-temperature conductivities of ca. 2 S cm–1 and 8 S cm–1, respectively. The magnetic properties are dominated by the paramagnetic S = 5/2 [Fe(Cl2An)3]3– anions whose high-spin character is confirmed by electron paramagnetic resonance and magnetic susceptibility measurements. The correlation between crystal structure and conductivity behavior was studied by means of tight-binding band structure calculations, which support the observed conducting properties.

10.1021/ic501001rhttps://hal.univ-angers.fr/hal-03344930