High-pressure electronic structure and phase transitions in monoclinic InSe: X-ray diffraction, Raman spectroscopy, and density functional theory

We have studied the crystal and electronic structure of monoclinic (MC) InSe under pressure finding a reversible phase transition to a ${\mathrm{Hg}}_{2}{\mathrm{Cl}}_{2}$-like tetragonal phase. The pressure evolution of the crystal structure was investigated by angle-dispersive x-ray diffraction and Raman spectroscopy in a diamond-anvil cell up to $30\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$. From the diffraction experiments, we deduced that MC InSe becomes gradually more symmetric under pressure, transforming the crystal structure into a tetragonal one at $19.4\ifmmode\pm\else\textpm\fi{}0.5\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$. This phase transition occurs without any volume change. Ra…

Single-Component Magnetic Conductors Based on Mo3S7 Trinuclear Clusters with Outer Dithiolate Ligands

A trinuclear cluster complex containing the Mo(3)S(7) central unit coordinated to dithiolate ligands, in particular the organic dmit (1,3-dithia-2-thione-4,5-dithiolate) anion, has been used to prepare a single-component molecular conductor formed by the threefold symmetry magnetic building block Mo(3)S(7)(dmit)(3) (1). The [Mo(3)S(7)(dmit)(3)](2)(-) ([1](2)(-)) diamagnetic anion forms dimers by interaction between the electrophilic cluster axial sulfur atoms and the sulfur atoms of the outer dithiolate ligand. Additional contacts between adjacent dmit ligands result in chain formation. The two-electron oxidation of [1](2)(-) yields to a three-dimensional molecular solid formed by neutral M…

Near-Edge X-ray Absorption Fine Structure Investigation of the Quasi-One-Dimensional Organic Conductor (TMTSF)2PF6

We present high-resolution near-edge X-ray absorption fine structure (NEXAFS) measurements at the P L2/3-edges, F K-edge, C K-edge and Se M2/3-edges of the quasi-one-dimensional (1D) conductor and superconductor (TMTSF)2PF6. NEXAFS allows probing the donor and acceptor moieties separately; spectra were recorded between room temperature (RT) and 30 K at normal incidence. Spectra taken around RT were also studied as a function of the angle (θ) between the electric field of the X-ray beam and the 1D conducting direction. In contrast with a previous study of the S L2/3-edges spectra in (TMTTF)2AsF6, the Se M2/3-edges of (TMTSF)2PF6 do not exhibit a well resolved spectrum. Surprisingly, the C K-…

Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap.

Brotons-Gisbert, Mauro et al.

Crystal symmetry and pressure effects on the valence band structure ofγ-InSe andε-GaSe: Transport measurements and electronic structure calculations

This paper reports on Hall effect and resistivity measurements under high pressure up to 3--4 GPa in $p$-type $\ensuremath{\gamma}$-indium selenide (InSe) (doped with As, Cd, or Zn) and $\ensuremath{\epsilon}$-gallium selenide (GaSe) (doped with N or Sn). The pressure behavior of the hole concentration and mobility exhibits dramatic differences between the two layered compounds. While the hole concentration and mobility increase moderately and monotonously in $\ensuremath{\epsilon}$-GaSe, a large increase of the hole concentration near 0.8 GPa and a large continuous increase of the hole mobility, which doubled its ambient pressure value by 3.2 GPa, is observed in $\ensuremath{\gamma}$-InSe.…

Magnetic Molecular Conductors Based on Bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) and the Tris(chlorocyananilato)ferrate(III) Complex

Electrocrystallization of the bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) organic donor in the presence of the [Fe(ClCNAn)3]3– tris(chlorocyananilato)ferrate(III) paramagnetic anion in different stoichiometric ratios and solvent mixtures afforded two different hybrid systems formulated as [BEDT-TTF]4[Fe(ClCNAn)3]·3H2O (1) and [BEDT-TTF]5[Fe(ClCNAn)3]2·2CH3CN (2) (An = anilato). Compounds 1 and 2 present unusual structures without the typical segregated organic and inorganic layers, where layers of 1 are formed by Λ and Δ enantiomers of the anionic paramagnetic complex together with mixed-valence BEDT-TTF tetramers, while layers of 2 are formed by Λ and Δ enantiomers of the paramagnetic…

Hybrid Molecular Materials Based upon Organic π-Electron Donors and Metal Complexes. Radical Salts of Bis(ethylenethia)tetrathiafulvalene (BET-TTF) with the Octahedral Anions Hexacyanoferrate(III) and Nitroprusside. The First Kappa Phase in the BET-TTF Family

The synthesis, structure, and physical characterization of two new radical salts formed with the organic donor bis(ethylenethia)tetrathiafulvalene (BET-TTF) and the octahedral anions hexacyanoferrate(III), [Fe(CN)(6)](3-), and nitroprusside, [Fe(CN)(5)NO](2-), are reported. These salts are (BET-TTF)(4)(NEt(4))(2)[Fe(CN)(6)] (1) (monoclinic space group C2/c with a = 38.867(7) A, b = 8.438(8) A, c = 11.239(6) A, beta = 90.994(9) degrees, V = 3685(4) A(3), Z = 4) and (BET-TTF)(2)[Fe(CN)(5)NO].CH(2)Cl(2) (2) (monoclinic space group C2/c with a = 16.237(6) A, b = 18.097(8) A, c = 12.663(7) A, beta = 106.016(9) degrees, V = 3576(3) A(3), Z = 4). In salt 1 the organic BET-TTF molecules are packed …

Donor–anion interactions at the charge localization and charge ordering transitions of (TMTTF)2AsF6 probed by NEXAFS

High-resolution near-edge X-ray absorption fine structure (NEXAFS) measurements at the As M-edge, F K-edge and S L-edge of the Fabre salt (TMTTF)2AsF6 were performed from room temperature (RT) to 90 K, allowing to reach the charge localization regime below Tρ ≈ 230 K and to cross the charge ordering (CO) transition at TCO ≈ 102 K. The F K-edge and S L-edge spectra exhibit several transitions which have been indexed on the basis of first-principles DFT calculations. Upon cooling from RT significant energy shifts up to +0.8 eV and -0.4 eV were observed in transitions exhibited by the F 1s and S 2p spectra respectively, while the As 3p doublet does not show a significant shift. Opposite energy…

Experimental and theoretical study of band structure of InSe andIn1−xGaxSe(x<0.2)under high pressure: Direct to indirect crossovers

This paper reports on the pressure dependence of the absorption edge of indium selenide and ${\mathrm{In}}_{1\ensuremath{-}x}{\mathrm{Ga}}_{x}\mathrm{Se}$ alloys $(xl0.2)$ up to the pressure at which precursor effects of the phase transition prevent further transmission measurements. The absorption edge could be divided into three components exhibiting different pressure coefficients: one corresponding to a direct transition that could be analyzed through the Elliot-Toyozawa theory, and two supplementary edges with quadratic dependence on the photon energy. The first component is attributed to the direct transition at the Z point of the rhombohedral Brillouin zone. One of the quadratic abso…

Molecular conductors based on the mixed-valence polyoxometalates [SMo12O40]n- (n = 3 and 4) and the organic donors bis(ethylenedithio)tetrathiafulvalene and bis(ethylenedithio)tetraselenafulvalene.

The synthesis, crystal structure, and physical characterization of two new radical salts formed by the organic donors bis(ethylenedithio)tetrathiafulvalene (ET) and bis(ethylenediseleno)tetrathiafulvalene (BETS) and the Keggin polyoxometalate (POM) [SMo(12)O(40)](n-) are reported. The salts isolated are ET(8)[SMo(12)O(40)] x 10 H(2)O (1) (crystal data: (1) monoclinic, space group I2/m with a = 13.9300(10) A, b = 43.467(3) A, c = 13.9929(13) A, beta = 107.979(6) degrees, V = 8058.9(11) A(3), Z = 2) and BETS(8)[SMo(12)O(40)] x 10 H(2)O (2) (crystal data: monoclinic, space group I2/m with a = 14.0878(2) A, b = 44.1010(6) A, c = 14.0930(2) A, beta = 106.739(3) degrees, V = 8384.8 A(3), Z = 2). …

Enantiopure Conducting Salts of Dimethylbis(ethylenedithio)tetrathiafulvalene (DM‐BEDT‐TTF) with the Hexachlororhenate(IV) Anion

Invited for the cover of this issue is the group of Narcis Avarvari (CIMI team) at the Laboratory MOLTECH-Anjou, UMR 6200 CNRS – Universite d'Angers, France. The cover image shows the enantiopure tetrathiafulvalene precursors used for the preparation of chiral radical cation conducting salts, together with an artwork of their packing diagrams and the suggested mirror image relationship between them.

Enantiopure Conducting Salts of Dimethylbis(ethylenedithio)tetrathiafulvalene (DM‐BEDT‐TTF) with the Hexachlororhenate(IV) Anion (Eur. J. Inorg. Chem. 24/2014)

New BEDT-TTF/[Fe(C5O5)3]3- Hybrid System:  Synthesis, Crystal Structure, and Physical Properties of a Chirality-Induced α Phase and a Novel Magnetic Molecular Metal

The paramagnetic and chiral anion [Fe(C5O5)3]3- (C5O52-=croconate) has been combined with the organic donor BEDT-TTF (=ET=bis(ethylenedithio)tetrathiafulvalene) to synthesize a novel paramagnetic semiconductor with the first chirality-induced alpha phase, alpha-(BEDT-TTF)5[Fe(C5O5)3].5H2O (1), and one of the few known paramagnetic molecular metals, beta-(BEDT-TTF)5[Fe(C5O5)3].C6H5CN (2). Both compounds present layers of BEDT-TTF molecules, with the alpha or beta packing modes, alternating with layers containing the high-spin S=5/2 Fe(III) anions and solvent molecules. In the alpha phase, the alternation of the chiral [Fe(C5O5)3]3- anions along the direction perpendicular to the BEDT-TTF cha…

A chirality-induced alpha phase and a novel molecular magnetic metal in the BEDT-TTF/tris(croconate)ferrate(iii) hybrid molecular system

The novel paramagnetic and chiral anion [Fe(C5O5)3]32 has been combined with the organic donor BEDT-TTF (= ET = bis(ethylenedithio)tetrathiafulvalene) to yield the first chirality- induced α phase and a paramagnetic metal. Gomez Garcia, Carlos, Carlos.Gomez@uv.es ; Coronado Miralles, Eugenio, Eugenio.Coronado@uv.es ; Gimenez Saiz, Carlos, Carlos.Gimenez@uv.es

High-pressure, high-temperature phase diagram of InSe: A comprehensive study of the electronic and structural properties of the monoclinic phase of InSe under high pressure

We report on an investigation of the high-pressure, high-temperature phase diagram of InSe. We optically observed the phase transition from the rhombohedral polytype (InSe-I) to the monoclinic phase (InSe-II) and determined the phase boundary up to $10\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$. High-pressure resistivity measurements were performed to complement the optical measurements. Monoclinic and cubic InSe (InSe-III) were observed to be metastable around $14.5\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ and $420\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, and evidence suggesting the existence of an as yet unidentified new high-pressure and high-temperature phase was found. By means of optical ab…

Hybrid Molecular Materials Based upon the Photochromic Nitroprusside Complex, [Fe(CN)5NO]2-, and Organic π-Electron Donors. Synthesis, Structure, and Properties of the Radical Salt (TTF)7[Fe(CN)5NO]2 (TTF = Tetrathiafulvalene)

An organic/inorganic hybrid salt is obtained by combination of the photochromic nitroprusside complex with the organic donor TTF. The organic part shows an unprecedented 2D organization formed by an orthogonal arrangement of TTF hexamers and monomers. However, the donor layers are formed by pairs of moderately interacting dimeric (TTF)22+ units surrounded by neutral TTF molecules in such a way that the charge is localized and the compound is a semiconductor. Short contacts between the organic layers and the nitroprusside anions are present that may affect the photophysical properties of the nitroprusside.

Role ofp-dands-dinteractions in the electronic structure and band gap of Zn1−xMxO (M=Cr, Mn, Fe, Co, Ni, and Cu): Photoelectron and optical spectroscopy and first-principles band structure calculations

We report an investigation on the effect of $p$-$d$ and $s$-$d$ interactions in the electronic structure, and especially in the band-gap value, of wurtzite wide-gap diluted magnetic semiconductors Zn${}_{1\ensuremath{-}x}$${M}_{x}$O ($M=\mathrm{Cr}$, Mn, Fe, Co, Ni, Cu). Thin films prepared by pulsed laser deposition are investigated by means of optical absorption at low-temperature and photoelectron spectroscopy. Pure wurzite phase is shown to be maintained for Co and Mn concentrations up to 25$%$ and for Cr up to 10$%$, while in the case of Fe, Ni, and Cu, other phases are present for concentrations higher than 5, 2, and 1$%$, respectively. The band gap of the Zn${}_{1\ensuremath{-}x}$${M…

GaS and InSe equations of state from single crystal diffraction

We have performed single crystal angle dispersive X-ray diffraction at high pressure in order to investigate the GaS and InSe equations of state. We situate the transition from β-GaS to GaS-II at 2 7 0 3. ± . GPa. In the InSe experiment we locate the beginning of the phase transition at 7.6 ± 0.6 GPa. The equations of state of β-GaS ( 0 43 27 0 06V = . ± . Å 3 , 37 2 GPaB = ± , 5 2B = .¢ ), GaS-II ( 0 42 4 0 2V = . ± . Å 3 , 50 3 GPaB = ± and 4 3 0 3B = . ± .¢ ) and γ-InSe ( 0 58 4 0 2V = . ± . Å 3 , 24 3 GPaB = ± and 8 6 0 8B = . ± .¢ ) are discussed and compared with the results of an ab-initio calculation.

Specific features of the electronic structure of III–VI layered semiconductors: recent results on structural and optical measurements under pressure and electronic structure calculations

In this paper we review some recent results on the electronic structure of III-VI layered semiconductors and its dependence under pressure, stressing the specific features that differentiate their behaviour from that of tetrahedrally coordinated semiconductors. We will focus on several unexpected results that have led to changes in the image that was currently accepted a few years ago. Intralayer bond angles change under pressure and the layer thickness remains virtually constant or increases. As a consequence, models based in intra- and inter-layer deformation potentials fail in explaining the low pressure nonlinearity of the band gap. Numerical-atomic-orbital/density-functional-theory ele…

Optical and electronic properties of 2H−MoS2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

Monolayers of transition-metal dichalcogenide semiconductors present spin-valley locked electronic bands, a property with applications in valleytronics and spintronics that is usually believed to be absent in their centrosymmetric (as the bilayer or bulk) counterparts. Here we show that bulk $2\mathrm{H}\text{\ensuremath{-}}\mathrm{Mo}{\mathrm{S}}_{2}$ hides a spin-polarized nature of states determining its direct band gap, with the spin sequence of valence and conduction bands expected for its single layer. This relevant finding is attained by investigating the behavior of the binding energy of $A$ and $B$ excitons under high pressure, by means of absorption measurements and density-functi…

First-principles study of the electronic structure of cubicGaS: Metallic versus insulating polymorphs

The electronic structure of different polymorphs of gallium sulphide $(\mathrm{GaS})$ with cubic structure is investigated by means of first-principles band structure calculations in connection with experimental reports on a metastable semiconducting cubic form of this material. The expected metallic character of simple cubic phases containing one $\mathrm{GaS}$ group per unit cell (rocksalt or zinc-blende) is confirmed by the calculations. A cubane-based zinc-blende structure is found to exhibit a band gap which is compatible with experimental results but the unit cell parameter is much larger than the reported ones. We have also studied cubic phases containing hydrogen. It is found that t…

Band structure of indium selenide investigated by intrinsic photoluminescence under high pressure

This paper reports on photoluminescence experiments in $n$-type indium selenide $(T=300\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ under hydrostatic pressure up to 7 GPa at low and high excitation densities. Photoluminescence measurements at low excitation density exhibit a broad band around the energy of the direct band gap of $\mathrm{InSe}$ and with the same pressure dependence. The reversible increase of its linewidth above $1\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ is associated to a direct-to-indirect band-gap crossover between valence band maxima. The reversible decrease of its intensity above $4\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ is interpreted as evidence of a direct-to-indirect b…

Structural Diversity and Physical Properties of Paramagnetic Molecular Conductors Based on Bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) and the Tris(chloranilato)ferrate(III) Complex

International audience; Electrocrystallization of bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) in the presence of the tris(chloranilato)ferrate(III) [Fe(Cl2An)3]3– paramagnetic chiral anion in different stoichiometric ratios and solvent mixtures afforded three different hybrid systems formulated as [BEDT-TTF]3[Fe(Cl2An)3]·3CH2Cl2·H2O (1), δ-[BEDT-TTF]5[Fe(Cl2An)3]·4H2O (2), and α‴-[BEDT-TTF]18[Fe(Cl2An)3]3·3CH2Cl2·6H2O (3). Compound 1 presents an unusual structure without the typical alternating organic and inorganic layers, whereas compounds 2 and 3show a segregated organic–inorganic crystal structure where layers formed by Λ and Δ enantiomers of the paramagnetic complex, together with…

A chiral molecular conductor: synthesis, structure, and physical properties of [ET]3[Sb2(L-tart)2].CH3CN (ET = bis(ethylendithio)tetrathiafulvalene; L-tart = (2R,3R)-(+)-tartrate).

The salt [ET](3)[Sb(2)(L-tart)(2)].CH(3)CN (1) has been obtained by electrocrystallization of the organic donor bis(ethylendithio)tetrathiafulvalene (ET or BEDT-TTF) in the presence of the chiral anionic complex [Sb(2)(L-tart)(2)](2-) (L-tart = (2R,3R)-(+)-tartrate). This salt crystallizes in the chiral space group P2(1)2(1)2(1) (a = 11.145(2) angstroms, b = 12.848(2) angstroms, c = 40.159(14) angstroms, V = 5750.4(14) angstroms(3), Z = 4) and is formed by alternating layers of the anions and of the organic radicals in a noncentrosymmetric alpha-type packing. This compound shows a room temperature electrical conductivity of approximately 1 S.cm(-1) and semiconducting behavior with an activa…

Transport measurements under pressure in III–IV layered semiconductors

PACS 61.50.Ks, 62.50.+p, 72.15.Jf, 72.80.Jc This paper reports on Hall effect, resistivity and thermopower effect measurements under high pressure up to 12 GPa in p-type γ-indium selenide (InSe) and e-gallium selenide (GaSe). The paper focuses on two applications of transport measurements under pressure: electronic structure and phase transition studies. As concerns the electronic structure, we investigate the origin of the striking differences between the pressure behaviour of transport parameters in both layered compounds. While the hole concentration and mobility increase moderately and monotonously in e-GaSe up to 10 GPa, a large increase of the hole concentration at near 0.8 GPa and a …

A New Conducting Molecular Solid Based on the Magnetic [Ni(dmf)6]2+ Cation and on [Ni(dsit)2]22− (dsit=1,3-dithiole-2-thione-4,5-diselenolate) Showing an Unprecedented Anion Packing

The synthesis, X-ray structure, magnetic and transport properties of the compound Ni(dmf) 6 [Ni(dsit) 2 ] 2 (dmf=dimethylformamide, dsit = 1,3-dithiole-2-thione-4,5-diselenolate) are described. This compound crystallizes in the monoclinic space group P2 1 /c, with a = 18.709(6), b = 22.975(5), c = 20.418(5) A, β = 99.31(2)° and Z = 6; its structure consists of [Ni(dsit) 2 ] 2- 2 dimers and isolated [Ni(dmf) 6 ] 2+ cations both centrosymmetric and non-centrosymmetric. The dimers are packed forming chains along the [101] direction with short Se...Se interdimer contacts. Additional interchains S...S contacts render this structure a three-dimensional character, never observed so far in other [N…

CCDC 983736: Experimental Crystal Structure Determination

Related Article: Flavia Pop, Magali Allain, Pascale Auban-Senzier, José Martínez-Lillo, Francesc Lloret, Miguel Julve, Enric Canadell, Narcis Avarvari|2014|Eur.J.Inorg.Chem.||3855|doi:10.1002/ejic.201400125

CCDC 955127: Experimental Crystal Structure Determination

Related Article: Eugenio Coronado, Simona Curreli, Carlos Giménez-Saiz, Carlos J. Gómez-García, Antonio Alberola and Enric Canadell|2009|Inorg.Chem.|48|11314|doi:10.1021/ic9018103

CCDC 955126: Experimental Crystal Structure Determination

Related Article: Eugenio Coronado, Simona Curreli, Carlos Giménez-Saiz, Carlos J. Gómez-García, Antonio Alberola and Enric Canadell|2009|Inorg.Chem.|48|11314|doi:10.1021/ic9018103

CCDC 996584: Experimental Crystal Structure Determination

Related Article: Matteo Atzori, Flavia Pop, Pascale Auban-Senzier, Carlos J. Gómez-García , Enric Canadell, Flavia Artizzu, Angela Serpe, Paola Deplano, Narcis Avarvari, and Maria Laura Mercuri|2014|Inorg.Chem.|53|7028|doi:10.1021/ic501001r

CCDC 996582: Experimental Crystal Structure Determination

Related Article: Matteo Atzori, Flavia Pop, Pascale Auban-Senzier, Carlos J. Gómez-García , Enric Canadell, Flavia Artizzu, Angela Serpe, Paola Deplano, Narcis Avarvari, and Maria Laura Mercuri|2014|Inorg.Chem.|53|7028|doi:10.1021/ic501001r

CCDC 1945945: Experimental Crystal Structure Determination

Related Article: Suchithra Ashoka Sahadevan, Alexandre Abhervé, Noemi Monni, Pascale Auban-Senzier, Joan Cano, Francesc Lloret, Miguel Julve, Hengbo Cui, Reizo Kato, Enric Canadell, Maria Laura Mercuri, Narcis Avarvari|2019|Inorg.Chem.|58|15359|doi:10.1021/acs.inorgchem.9b02404

CCDC 983737: Experimental Crystal Structure Determination

Related Article: Flavia Pop, Magali Allain, Pascale Auban-Senzier, José Martínez-Lillo, Francesc Lloret, Miguel Julve, Enric Canadell, Narcis Avarvari|2014|Eur.J.Inorg.Chem.||3855|doi:10.1002/ejic.201400125

CCDC 996583: Experimental Crystal Structure Determination

Related Article: Matteo Atzori, Flavia Pop, Pascale Auban-Senzier, Carlos J. Gómez-García , Enric Canadell, Flavia Artizzu, Angela Serpe, Paola Deplano, Narcis Avarvari, and Maria Laura Mercuri|2014|Inorg.Chem.|53|7028|doi:10.1021/ic501001r

CCDC 1945944: Experimental Crystal Structure Determination

Related Article: Suchithra Ashoka Sahadevan, Alexandre Abhervé, Noemi Monni, Pascale Auban-Senzier, Joan Cano, Francesc Lloret, Miguel Julve, Hengbo Cui, Reizo Kato, Enric Canadell, Maria Laura Mercuri, Narcis Avarvari|2019|Inorg.Chem.|58|15359|doi:10.1021/acs.inorgchem.9b02404