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RESEARCH PRODUCT
Influence of the MgO barrier thickness on the lifetime characteristics of magnetic tunnelling junctions for sensors
B. LevenFrederick CasperMathias KläuiBurkard HillebrandsJohannes PaulA. ConcaRonald LehndorffGerhard Jakobsubject
010302 applied physicseducation.field_of_studyMaterials scienceAcoustics and UltrasonicsDielectric strengthCondensed matter physicsAnnealing (metallurgy)Population02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesShape parameterSurfaces Coatings and FilmsElectronic Optical and Magnetic Materials0103 physical sciences0210 nano-technologyeducationLow voltageQuantum tunnellingWeibull distributionVoltagedescription
Magnetic tunnelling junctions increasingly enter the market for magnetic sensor applications. Thus, technological parameters such as the lifetime characteristics become more and more important. Here, an analysis of the lifetime characteristics of magnetic tunnelling junctions using the Weibull statistical distribution for CoFeB/MgO/CoFeB junctions is presented. The Weibull distribution is governed by two parameters, the characteristic lifetime η of the population and the shape parameter β, which gives information about the presence of an infant mortality. The suitability of the Weibull distribution is demonstrated for the description of dielectric breakdown processes in MgO-based tunnelling junctions at different voltages. A study of the dependence of the characteristic lifetime extrapolated to the low voltage regime, and the β parameter on the nominal barrier thickness and the resistance × area product of the MgO barrier is shown. The influence of the RF deposition power for the MgO barrier and an annealing step on the Weibull parameters is also discussed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-05-04 | Journal of Physics D: Applied Physics |