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RESEARCH PRODUCT
Observation of disorder-induced weakening of electron-phonon interaction in thin noble-metal films
L. J. TaskinenIlari MaasiltaJ. T. Karvonensubject
PhysicsCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed matter physicsCondensed Matter - SuperconductivityFOS: Physical sciences02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesPower law3. Good healthElectronic Optical and Magnetic MaterialsSuperconductivity (cond-mat.supr-con)Tunnel junctionCondensed Matter::SuperconductivityScattering rateLattice (order)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencesElectron temperatureThin film010306 general physics0210 nano-technologyFermi gasdescription
We have used symmetric normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry in the temperature range 50 - 700 mK. By Joule heating the electron gas and measuring the electron temperature, we show that the electron-phonon (e-p) scattering rate in the simplest noble metal disordered thin films (Cu,Au) follows a $T^4$ temperature dependence, leading to a stronger decoupling of the electron gas from the lattice at the lowest temperatures. This power law is indicative e-p coupling mediated by vibrating disorder, in contrast to the previously observed $T^3$ and $T^2$ laws.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2003-11-03 | Physical Review B |