0000000000023539
AUTHOR
J. T. Karvonen
Influence of Phonon dimensionality on Electron Energy Relaxation
We studied experimentally the role of phonon dimensionality on electron-phonon (e-p) interaction in thin copper wires evaporated either on suspended silicon nitride membranes or on bulk substrates, at sub-Kelvin temperatures. The power emitted from electrons to phonons was measured using sensitive normal metal-insulator-superconductor (NIS) tunnel junction thermometers. Membrane thicknesses ranging from 30 nm to 750 nm were used to clearly see the onset of the effects of two-dimensional (2D) phonon system. We observed for the first time that a 2D phonon spectrum clearly changes the temperature dependence and strength of the e-p scattering rate, with the interaction becoming stronger at the …
Electron–phonon interaction in a thin Al–Mn film
Abstract Aluminum doped with manganese is an interesting novel material with applications in normal metal–insulator–superconductor (NIS) tunnel junction devices and transition-edge sensors at sub-Kelvin temperatures. We have studied the electron–phonon (e–p) coupling in a thin aluminum film doped with 1% manganese, with a measuring technique based on DC hot-electron effect. The electron temperature was measured with the help of symmetric normal metal–insulator–superconductor tunnel-junction pairs (SINIS-thermometers). Measurements show that the temperature dependence of the e–p interaction is not consistent with existing theories for disordered metals, but follows a higher power law.
Direct measurement of the electron‐phonon relaxation rate in thin copper films
We have used normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry at sub-Kelvin temperatures. With the help of these thermometers, we have developed an ac-technique to measure the electron-phonon (e-p) scattering rate directly, without any other material or geometry dependent parameters, based on overheating the electron gas. The technique is based on Joule heating the electrons in the frequency range DC-10 MHz, and measuring the electron temperature in DC. Because of the nonlinearity of the electron-phonon coupling with respect to temperature, even the DC response will be affected, when the heating frequency reaches th…
Response time of a thermometer based on normal metal–insulator–superconductor (NIS) tunnel junctions
Abstract We have measured the thermal response of a superconductor–normal metal–superconductor (SINIS) tunnel junction structure at substrate temperature ∼60 mK by directly heating the electron system in the normal metal island. In our structure, we find the response time is determined by the electron–phonon coupling in the electron temperature range 300– 600 mK . By using AC heating, the cut-off frequency caused by this response time has been measured, showing that SINIS structures operate as a thermometer up to a few MHz in this temperature range.
Observation of disorder-induced weakening of electron-phonon interaction in thin noble-metal films
We have used symmetric normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry in the temperature range 50 - 700 mK. By Joule heating the electron gas and measuring the electron temperature, we show that the electron-phonon (e-p) scattering rate in the simplest noble metal disordered thin films (Cu,Au) follows a $T^4$ temperature dependence, leading to a stronger decoupling of the electron gas from the lattice at the lowest temperatures. This power law is indicative e-p coupling mediated by vibrating disorder, in contrast to the previously observed $T^3$ and $T^2$ laws.
Temperature Profile for Ballistic and Diffusive Phonon Transport in a Suspended Membrane with a Radial Symmetric Heat Source
We have calculated the temperature profiles for phonon heat transport in a suspended membrane with a radially symmetric heat source in the two extreme cases of either fully ballistic or fully diffusive transport. Theoretical results confirm that it is possible to distinguish these two transport mechanisms from the radial temperature profiles alone. Models are also compared to experimental data measured with 40 nm thick, free standing silicon nitride membranes below 1 K by using tunnel junction (SINIS) thermometers. The measured temperature profile is qualitatively in agreement with the ballistic model.
Electron-phonon interaction in thin copper and gold films
We have studied the electron-phonon (e-p) interaction in thin Cu and Au films at sub-Kelvin temperatures with the help of the hot electron effect, using symmetric normal metal-insulator-superconductor tunnel junction pairs as thermometers. By Joule heating the electron gas and measuring the electron and the lattice temperatures simultaneously, we show that the electron-phonon scattering rate follows a $T^{4}$ temperature dependence in both metals. The result is in accordance with the theory of e-p scattering in disordered films with vibrating boudaries and impurities, in contrast to the $T^{3}$-law expected for pure samples, and $T^{2}$-law for static disorder.