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RESEARCH PRODUCT
Electron–phonon interaction in a thin Al–Mn film
L. J. TaskinenJ. T. KarvonenIlari Maasiltasubject
PhysicsNuclear and High Energy PhysicsCondensed matter physicsDopingElectron phononchemistry.chemical_elementManganeseCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter::Materials SciencechemistryAluminiumTunnel junctionCondensed Matter::SuperconductivityElectron temperatureCoupling (piping)Condensed Matter::Strongly Correlated ElectronsInstrumentationdescription
Abstract Aluminum doped with manganese is an interesting novel material with applications in normal metal–insulator–superconductor (NIS) tunnel junction devices and transition-edge sensors at sub-Kelvin temperatures. We have studied the electron–phonon (e–p) coupling in a thin aluminum film doped with 1% manganese, with a measuring technique based on DC hot-electron effect. The electron temperature was measured with the help of symmetric normal metal–insulator–superconductor tunnel-junction pairs (SINIS-thermometers). Measurements show that the temperature dependence of the e–p interaction is not consistent with existing theories for disordered metals, but follows a higher power law.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-04-01 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |