6533b86dfe1ef96bd12c9dc3

RESEARCH PRODUCT

Exciton hopping inInxGa1−xNmultiple quantum wells

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The dynamics of photoexcited excitons in thin $\mathrm{In}\mathrm{Ga}\mathrm{N}∕\mathrm{Ga}\mathrm{N}$ multiple quantum wells (QW's) with different In contents was studied by comparing the experimental data obtained by photoluminescence (PL), PL excitation, and photoreflectance spectroscopy techniques with the results of Monte Carlo simulations of exciton hopping. The temperature dependence of the PL linewidth was demonstrated to be in a fair agreement with the model of phonon-assisted exciton in-plane hopping within In-rich regions with inhomogeneous broadening taken into account. The band potential fluctuations, which scale the dispersion of localized states the excitons are hopping over, were attributed to compositional disorder inside the In-rich regions. Meanwhile, the inhomogeneous broadening was explained by variation in mean exciton energy among the individual In-rich regions. For typical $2.5\text{\ensuremath{-}}\mathrm{nm}$-thick ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}$ $(x\ensuremath{\approx}0.22)$ QW's, the simulation revealed fluctuations of the band potential $(31\phantom{\rule{0.3em}{0ex}}\mathrm{meV})$ with additional inhomogeneous broadening $(29\phantom{\rule{0.3em}{0ex}}\mathrm{meV})$ and a crossover from a nonthermalized to thermalized exciton energy distribution at about $150\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. Both the fluctuations and inhomogeneous broadening showed an enhancement with increasing of In content. Simultaneously, a Bose-Einstein-like temperature dependence of the exciton energy in the wells was extracted using data on the PL peak position. The dependence exhibited a fair conformity with the photoreflectance data. Moreover, the density of localized states used in the simulation was found to be consistent with the PL excitation spectrum.