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RESEARCH PRODUCT

Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

D. CorsoCalogero PaceFelix PalumboPaolo FinocchiaroSebania LibertinoYakov RoizinFabio PrincipatoSalvatore LombardoM. Lisiansky

subject

Materials sciencePhotonbusiness.industryoxide-nitride-oxide (ONO)radiation hardnessFlash memoriesShape parameterElectronic Optical and Magnetic MaterialsThreshold voltageIonizing radiationNon-volatile memoryFlash memories nitride read-only memories (NROMs) oxide–nitride–oxide (ONO) radiation hardness.nitride read-only memories (NROMs)OptoelectronicsIrradiationElectrical and Electronic EngineeringbusinessRadiation hardeningWeibull distribution

description

Threshold voltage (V-th) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (gamma-and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to V-th variation and that the V-th loss and the variability can be modeled by a Weibull statistics with a shape parameter k similar to 2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the V-th loss distribution can be obtained, thus providing a predictive model of the radiation tolerance of NROM memory arrays.

yearjournalcountryeditionlanguage
2012-10-01
10.1109/ted.2012.2206596https://dx.doi.org/10.1109/TED.2012.2206596