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RESEARCH PRODUCT

Dielectric memory effects of (Mn, Fe, Co, Cu, Eu) doped PLZT ceramics

A. V. ShilnikovA. I. BurkhanovV. Dimza

subject

Materials sciencevisual_artElectric fieldThermalDopingRelaxation (NMR)visual_art.visual_art_mediumAnalytical chemistryInterphaseCeramicDielectricCondensed Matter PhysicsElectronic Optical and Magnetic Materials

description

Abstract Dielectric memory effects—effect of thermal memory (ETM) and effect of electric field memory (EFM) have been studied in (Mn, Fe, Co, Cu, Eu) doped PLZT ceramics. The obtained results have been discussed on the assumption that the ETM and EFM depends on relaxation of domain and interphase (polar and nonpolar) boundaries influenced by changes of defects conditions at doping.

yearjournalcountryeditionlanguage
1992-06-01Ferroelectrics
https://doi.org/10.1080/00150199208223425