6533b873fe1ef96bd12d44a6

RESEARCH PRODUCT

Magnetoresistance effects in the metallic antiferromagnet Mn$_2$Au

Jairo SinovaMathias KläuiS. Yu. BodnarY. SkourskiOlena GomonayMartin Jourdan

subject

Magnetoresistance530 PhysicsGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyEpitaxy01 natural sciencesMagnetizationCondensed Matter::Materials Science0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)AntiferromagnetismThin film010306 general physicsPhysicsCondensed Matter - Materials ScienceAnnihilationSpintronicsCondensed matter physicsCondensed Matter - Mesoscale and Nanoscale PhysicsMaterials Science (cond-mat.mtrl-sci)530 Physik021001 nanoscience & nanotechnologyMagnetic fieldCondensed Matter::Strongly Correlated Electrons0210 nano-technology

description

In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the N\'eel vector. We investigate the magnetoresistance effects resulting from magnetic field induced reorientations of the staggered magnetization of epitaxial antiferromagnetic Mn2Au(001) thin films. The samples were exposed to 60 T magnetic field pulses along different crystallographic in-plane directions of Mn2Au(001), while their resistance was measured. For the staggered magnetization aligned via a spin-flop transition parallel to the easy [110]-direction, an ansiotropic magnetoresistance of -0.15 % was measured. In the case of a forced alignment of the staggered magnetization parallel to the hard [100]-direction, evidence for a larger anisotropic magnetoresistance effect was found. Furthermore, transient resistance reductions of about 1 % were observed, which we associate with the annihilation of antiferromagnetic domain walls by the magnetic field pulses.

yearjournalcountryeditionlanguage
2019-09-27
10.1103/physrevapplied.14.014004http://arxiv.org/abs/1909.12606