6533b874fe1ef96bd12d638a
RESEARCH PRODUCT
Radiation induced generation of non-bridging oxygen hole center in silica: Intrinsic and extrinsic processes
Bruno BoizotMarco CannasLavinia VaccaroAldo Parlatosubject
Fused quartzPhotoluminescenceLuminescencebusiness.industrySettore FIS/01 - Fisica Sperimentalechemistry.chemical_elementSilicaCrystal structureCondensed Matter PhysicsPhotochemistryCrystallographic defectOxygenElectronic Optical and Magnetic Materialslaw.inventionAbsorptionOpticsChemical bondchemistrylawMaterials ChemistryCeramics and CompositesIrradiationDefectbusinessLuminescencedescription
Abstract The generation of non-bridging oxygen hole center ( Si–O ) was investigated in a wide variety of natural (fused quartz) and synthetic silica samples exposed to different γ- and β-irradiation doses by looking at its optical bands. We distinguish two different generation processes: intrinsic associated with the cleavage of Si–O bond and characterized by a sublinear law and extrinsic due to the conversion of OH precursor characterized by a growth curve with a saturating tendency. The interplay between the two processes and the role of H are discussed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-04-01 |