In-situ observation of beta-ray induced UV optical absorption in a-SiO2: radiation darkening and room temperature recovery

International audience; We studied the optical absorption in the 3.0-6.2 eV range induced in bulk amorphous SiO2 by beta-ray irradiation up to similar to 1 MGy at room temperature. The induced absorption was measured in situ both during irradiation and in the post irradiation time. Our data evidence E', center as the main defect induced by irradiation and the partial decay of their absorption band at about 5.8 eV after irradiation. A quantitative analysis of the time evolution of the induced absorption shows that the transmission recovery observed after irradiation is compatible with the reaction of radiation-induced defects with H-related (H-2, H2O) species diffusing in the amorphous matrix

Generation of oxygen deficient point defects in silica by γ and β irradiation

We report an experimental study of the effects of y and β irradiation on the generation of a point defect known as ODC(II) in various types of commercial silica (a-SiO 2 ). The ODC(II) has been detected by means of photoluminescence (PL) spectroscopy measuring the PL band centered at 4.4 eV and excited at 5.0 eV associated to this defect. Our experiments show that ODC(II) are induced in all the investigated materials after irradiation at doses higher than 5 x 10 2 kGy. A good agreement is observed between the efficiencies of generation of ODC(II) under y and β irradiation, enabling a comprehensive study up to the dose of 5 x 10 6 kGy. Two different growth rates, one in the low and one in th…

β-ray irradiation effects on silica nanoparticles

By electron paramagnetic resonance (EPR) measurements, we examine the amplitude of the signal typically due to a combination of NBOHC (Non Bridging Hole Center) and POR (Peroxy Radical) defects induced by β-ray irradiation (from 1.2 to 1200 MGy) in silica nanoparticles with diameter ranging from 7 to 20 nm. Our data indicate that the signal line-shapes recorded at different doses is quite independent from the particles sizes and from the dose. Furthermore, for each considered nanoparticles size, the concentration of defects is also almost constant with respect to dose, and it does not change significantly if measured after 2 or 9 months from the irradiation. By contrast, we observed that th…

Isolation of the CH3˙ rotor in a thermally stable inert matrix: first characterization of the gradual transition from classical to quantum behaviour at low temperatures

International audience; Matrix isolation is a method which plays a key role in isolating and characterizing highly reactive molecularradicals. However, the isolation matrices, usually composed of noble gases or small diamagnetic molecules,are stable only at very low temperatures, as they begin to desegregate even above a few tens of Kelvin.Here we report on the successful isolation of CH3 radicals in the cages of a nearly inert clathrate–SiO2matrix. This host is found to exhibit a comparable inertness with respect to that of most conventionalnoble gas matrices but it is characterized by a peculiar thermal stability. The latter property is related to thecovalent nature of the host material a…

Irradiation effects on the absorption edge of silica glass

Abstract Vacuum ultraviolet absorption experiments were carried out on a variety of specimens of amorphous silica β-irradiated at different doses from ∼103 to 5 × 106 kGy. Changes in the width of the absorption (Urbach) edge were investigated. These changes strongly depend on the kind of silica considered: in particular the Urbach energy of silica of industrial manufacture increases in the irradiated samples, whereas in sol–gel silica it is poorly influenced by the irradiation. The fictive temperature of the different materials before and after irradiation was also monitored. The changes of the Urbach energy and of the fictive temperature are tentatively discussed considering the disorder d…

Erratum to ‘Raman spectroscopy of β-irradiated silica glass’ by B. Boizot, S. Agnello, B. Reynard, R. Boscaino and G. Petite [J. Non-Cryst. Solids 325 (2003) 22–28]

Spectroscopic parameters related to non bridging oxygen hole centers in amorphous-SiO2

The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that the intensities of these optical bands are linearly correlated in agreement with the model in which they are assigned to a single defect. This finding allows to determine spectroscopic parameters related to optical transitions efficiency: the oscillator strength of the 4.8 eV results ~200 times higher than that of the 2.0 eV; the 1.9 eV luminescence quantum yield under 4.8 eV excitation is lower (by a factor ~3) than that under 2.0 eV excitation. These res…

Raman spectroscopy study of β-irradiated silica glass

International audience; Natural and synthetic silica glass samples with different OH content have been submitted to β-irradiation at different doses from 106 to 5 × 109 Gy in a Van de Graaff accelerator. Structural changes under irradiation have been analyzed by Raman spectroscopy. The main findings are: (i) a decrease of the Si–O–Si angular dispersion and the average Si–O–Si angle as a function of dose and (ii) an increase of number of three-membered SiO4 ring concentration during irradiation. These results show therefore that purely electronic excitation from β-irradiation induces in a-SiO2 small but significant structural changes of the SiO4 membered ring statistics (size and dispersion)…

Irradiation effects on the OH-related infrared absorption band in synthetic wet silica.

The effects of b-irradiation on the OH-related infrared (IR) absorption band in synthetic wet silica samples have been investigated by Fourier transform infrared spectroscopy. Depending on the accumulated doses, b-irradiation affects different zones of the IR composite band at about 3670 cm 1 , assigned to the OH stretching modes of silanol groups. These modifications are independent of the original OH content. The results are discussed considering possible radiation-induced changes of the silanol bonding configuration and of the glass network. These are monitored by revealing the IR band a 2260 cm 1 , which is related to the distribution of Si–O–Si bond angle. We have identified the existence of…

Silica nanoparticle core structure examined by the E?Si? center 29Si strong hyperfine interaction

Abstract β-Ray irradiation up to 1.2 GGy was employed to induce E′Si γ defects and to study the structure of silica nanoparticles with diameters from 7 up to 20 nm. Defect concentration and their 29 Si strong hyperfine doublet were investigated through electron paramagnetic resonance measurements. Our data indicate that stable defects are located in the nanoparticle core. Furthermore, the E′Si γ hyperfine interaction evidences that the core structure is denser than bulk silica and independent from the particle size. Finally, we put in evidence that the core structure is stable and unaffected by the irradiation in the investigated dose range maintaining the specific features of nanoparticles.

Radiation induced generation of non-bridging oxygen hole center in silica: Intrinsic and extrinsic processes

Abstract The generation of non-bridging oxygen hole center ( Si–O ) was investigated in a wide variety of natural (fused quartz) and synthetic silica samples exposed to different γ- and β-irradiation doses by looking at its optical bands. We distinguish two different generation processes: intrinsic associated with the cleavage of Si–O bond and characterized by a sublinear law and extrinsic due to the conversion of OH precursor characterized by a growth curve with a saturating tendency. The interplay between the two processes and the role of H are discussed.