Search results for " Atomic Force Microscopy"
showing 10 items of 56 documents
Second-harmonic Generation Microscopy of Carbon Nanotubes
2012
We image an individual single-walled carbon nanotube (SWNT) by second-harmonic generation (SHG) and transmission electron microscopy and propose that SHG microscopy could be used to probe the handedness of chiral SWNTs.
High-Density Arrays of Germanium Nanowire Photoresistors
2006
Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, Eg, of approximately 0.66 eV (temperature T = 300 K) and has been widely used for the fabrication of photodetectors, radiation detectors, charged particle and photon tracking devices, far-infrared photoresistors, and numerous other devices. During the last few years there has also been increasing interest in the use of nanostructures (quantum dots and wires) of both germanium and silicon as materials for potential applications in sensors, nanophotonics, and nan…
Nanogoniometry with scanning force microscopy: a model study of CdTe thin films.
2007
In this paper scanning force microscopy is combined with simple but powerful data processing to determine quantitatively, on a sub-micrometer scale, the orientation of surface facets present on crystalline materials. A high-quality scanning force topography image is used to determine an angular histogram of the surface normal at each image point. In addition to the known method for the assignment of Miller indices to the facets appearing on the surface, a quantitative analysis is presented that allows the characterization of the relative population and morphological quality of each of these facets. Two different CdTe thin films are used as model systems to probe the capabilities of this met…
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
2017
One of the main challenges to exploit molybdenum disulfide (MoS2) potentialities for the next-generation complementary metal oxide semiconductor (CMOS) technology is the realization of p-type or ambipolar field-effect transistors (FETs). Hole transport in MoS2 FETs is typically hampered by the high Schottky barrier height (SBH) for holes at source/drain contacts, due to the Fermi level pinning close to the conduction band. In this work, we show that the SBH of multilayer MoS2 surface can be tailored at nanoscale using soft O-2 plasma treatments. The morphological, chemical, and electrical modifications of MoS2 surface under different plasma conditions were investigated by several microscopi…
Environmental chamber for an atomic force microscope.
2007
A commercial atomic force microscope (AFM), originally designed for operation in ambient conditions, was placed inside a compact aluminum chamber, which can be pumped down to high vacuum levels or filled with a desired gaseous atmosphere, including humidity, up to normal pressure. The design of this environmental AFM is such that minimal intrusion is made to the original setup, which can be restored easily. The performance inside the environmental chamber is similar to the original version.
2021
Gold-assisted mechanical exfoliation currently represents a promising method to separate ultralarge (centimeter scale) transition metal dichalcogenide (TMD) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vdW) crystals. The strong interaction between Au and chalcogen atoms is key to achieving this nearly perfect 1L exfoliation yield. On the other hand, it may significantly affect the doping and strain of 1L TMDs in contact with Au. In this paper, we systematically investigated the morphology, strain, doping, and electrical properties of large area 1L MoS2 exfoliated on ultraflat Au films (0.16-0.21 nm roughness) and finally transferred to an i…
On-surface covalent linking of organic building blocks on a bulk insulator.
2011
On-surface synthesis in ultrahigh vacuum provides a promising strategy for creating thermally and chemically stable molecular structures at surfaces. The two-dimensional confinement of the educts, the possibility of working at higher (or lower) temperatures in the absence of solvent, and the templating effect of the surface bear the potential of preparing compounds that cannot be obtained in solution. Moreover, covalently linked conjugated molecules allow for efficient electron transport and are, thus, particularly interesting for future molecular electronics applications. When having these applications in mind, electrically insulating substrates are mandatory to provide sufficient decoupli…
Atomic force microscopy and Raman investigation on the sintering process of amorphous SiO2 nanoparticles
2010
We report an experimental investigation on the sintering process induced in fumed silica powders by isochronal thermal treatments at T=1270 K. Three types of fumed silica are considered, consisting of amorphous SiO2 (a-SiO2) particles with mean diameters 7, 14, and 40 nm. The study is performed by atomic force microscopy (AFM), to follow the morphological changes, and by Raman scattering, to obtain information on the concomitant structural modifications. The former method indicates that the sintering process proceeds by aggregation of single particles into larger grains, whose sizes increase with the thermal treatment duration. Furthermore, for each fumed silica type considered, the quantit…
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC
2022
In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H-SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1019 cm−3). After assessing the excellent thickness uniformity (≈3L-MoS2) and conformal coverage of the PLD-grown films by Raman mapping and transmission electron microscopy, the current injection across the heterojunctions is investigated by temperature-dependent current–voltage characterization of the diodes and by nanoscale current mapping with conductive atomic force microscopy. A wide tunability of the transport properties is shown by the SiC surface dopi…
First images obtained in the near infrared spectrum with the photon scanning tunneling microscope
1993
Abstract First images obtained in the near infrared spectrum with a photon scanning tunneling microscope are presented. The intensity of the light collected by the fibertip, at λ = 1.3 λm , which is a function of the separation between the tip and the sample surface is in agreement with that predicted by the theory. Images of quartz and silicon oxide are presented and the latter is compared with that obtained by an atomic force microscope.