Search results for " Crystal"
showing 10 items of 3073 documents
Application of enthalpy model for floating zone silicon crystal growth
2017
Abstract A 2D simplified crystal growth model based on the enthalpy method and coupled with a low-frequency harmonic electromagnetic model is developed to simulate the silicon crystal growth near the external triple point (ETP) and crystal melting on the open melting front of a polycrystalline feed rod in FZ crystal growth systems. Simulations of the crystal growth near the ETP show significant influence of the inhomogeneities of the EM power distribution on the crystal growth rate for a 4 in floating zone (FZ) system. The generated growth rate fluctuations are shown to be larger in the system with higher crystal pull rate. Simulations of crystal melting on the open melting front of the pol…
Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
2019
We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…
Comparative study of the luminescence properties of macro- and nanocrystalline MgO using synchrotron radiation
2013
MgO nano-powder with an average crystallite size of nanoparticles ranging 10-15 nm was synthesized using the extractive-pyrolytic method and was studied by room temperature VUV spectroscopy under synchrotron radiation excitation. Comparative analysis of their luminescent properties with that of mac- rocrystalline powder analogues and an MgO single crystal, grown by the arc-fusion method, has been per- formed under excitation by pulsed VUV synchrotron radiation. Special attention was paid to VUV spectral range, which is not reachable with commonly used lamp and laser sources. A considerable blue shift of about 0.3 eV in the excitation spectra of 2.95 eV emission band, was revealed in nanocry…
Atomic structure of manganese-doped yttrium orthoaluminate
2018
Abstract Using hybrid exchange-correlation functional within density functional theory we have performed first-principle total energy calculations of Mn-doped yttrium orthoaluminate (YAlO3). Its equilibrium atomic structure has been predicted through optimization of coordinates of all atoms using a supercell approach. In our research both Mn3+ and Mn2+ ions have been substituted for the host alumina atom at orthorhombic Pbnm unit cell of YAlO3. F-center has been implemented as charge-compensating defect in case, when Mn2+ dopant is under study. In this study we thoroughly analyze the atomic displacements in seven nearest to Mn ion coordination spheres. Insertion of isoelectronic substitutio…
Shallow and deep trap levels in X-ray irradiated β-Ga2O3: Mg
2019
Abstract The results of the investigation of thermostimulated luminescence (TSL) and photoconductivity (PC) of the X-ray irradiated undoped and Mg2+ doped β-Ga2O3 single crystals are presented. Three low-temperature peaks at 116 K, 147 K and 165 K are observed on the TSL glow curves of undoped crystals. The high-temperature TSL peaks at 354 K and 385 K are dominant in Mg2+ doped crystals. The correlation between doping with Mg2+ ions and the local energy levels of the intrinsic structural defects of β-Ga2O3, which are responsible for the TSL peaks and PC, is established. The nature of TSL peaks and the appropriate photoconductivity excitation bands are discussed.
Depth profiles of damage creation and hardening in MgO irradiated with GeV heavy ions
2019
This work has been performed within the framework of the EUROfusion Enabling Research project: ENR-MFE19.ISSP-UL-02 “Advanced experimental and theoretical analysis of defect evolution and structural disordering in optical and dielectric materials for fusion applications”. The views and opinions expressed herein do not necessarily reflect those of the European Commission.
Raman spectra and anomalies of dielectric properties and thermal expansion of lead-free (1−x)Na0.5Bi0.5TiO3-xSrTiO3 (x = 0, 0.08 and 0.1) ceramics
2016
ABSTRACTThermal expansion, Raman and dielectric properties of the lead-free (1−x)Na0.5Bi0.5TiO3-xSrTiO3 (x = 0, 0.08 and 0.1) ceramic solid solutions, fabricated by the conventional solid-state reaction method, were investigated. The Sr-doping results in an increase of the dielectric permittivity, broadening of the permittivity maximum, enhancement of the relaxation near depolarization temperature, broadening of the Raman bands and shift of all anomalies toward lower temperatures. The observed effects are attributed to an increase of the degree of cationic disorder and enhancement of the relaxor-like features. Anomalies in the thermal expansion strain were observed at the temperatures corre…
Relaxation of polarization in (K0.5Na0.5)(Nb0.93Sb0.07)O3 ferroelectric ceramics modified by BaTiO3
2017
ABSTRACTA study of low-frequency relaxation of polarization in conventionally prepared ceramic compounds of (1-x)(K0.5Na0.5)(Nb0.93Sb0.07)O3+xBaTiO3+0.5mol.%MnO2 (x = 0.02, 0.04) examined over a wide temperature range is reported. Anomalous behavior of the temperature dependence of the coercive field Ec(T) is detected in the temperature range of the orthorhombic to tetragonal phase transition. The observed features of polarization are assigned to dynamics of the domain structure at the temperature range of phase coexistence.
Single crystal-like thin films of blue bronze
2021
Abstract Pulsed laser deposition technique was employed to grow thin films of K 0.3 M o O 3 on A l 2 O 3 (1-102) and S r T i O 3 (510) substrates. Structural and imaging characterization revealed good quality films with well oriented grains of few microns in length. Both non-selective (transport) and order-selective (femtosecond pump-probe spectroscopy) probes revealed charge density wave properties that are very close to those of the single crystals. The films exhibit metal-semiconductor phase transition in resistivity, pump-probe data show phase transition at the same temperature as the single crystal and the threshold for the photo-induced phase transition is approximately the same as in…
Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire
2020
A detailed structural investigation of the semiconductor-to-metal transition (SMT) in vanadium dioxide thin films deposited on sapphire substrates by pulsed laser deposition was performed by in situ temperature-dependent X-ray diffraction (XRD) measurements. The structural results are correlated with those of infrared radiometry measurements in the SWIR (2.5-5 μm) and LWIR (8-10.6 μm) spectral ranges. The main results indicate a good agreement between XRD and optical analysis, therefore demonstrating that the structural transition from monoclinic to tetragonal phases is the dominating mechanism for controlling the global properties of the SMT transition. The picture that emerges is a SMT tr…