Search results for " DAMAGE"
showing 10 items of 1139 documents
ODS ferritic steels obtained from gas atomized powders through the STARS processing route: Reactive synthesis as an alternative to mechanical alloying
2018
Authors acknowledge ALBA synchrotron (Spain) for the provision of beamtime on the beam line BL22-CLAESS (Proposal 2016081797). Transmission electron microscopy observations were accomplished at Centro Nacional de Microscopía Electrónica, CNME-UCM. This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014–2018 under grant agreement No 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. Financial support from Basque Government through the ELKARTEK ACTIMAT 2016 project is also acknowledged.
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
2021
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed fail…
Design of large scale sensors in 180 nm CMOS process modified for radiation tolerance
2019
International audience; The last couple of years have seen the development of Depleted Monolithic Active Pixel Sensors (DMAPS) fabricated with a process modification to increase the radiation tolerance. Two large scale prototypes, Monopix with a column drain synchronous readout, and MALTA with a novel asynchronous architecture, have been fully tested and characterized both in the laboratory and in test beams. This showed that certain aspects have to be improved such as charge collection after irradiation and the output data rate. Some improvements resulting from extensive TCAD simulations were verified on a small test chip, Mini-MALTA. A detailed cluster analysis, using data from laboratory…
UV–VUV laser induced phenomena in SiO2 glass
2004
Abstract Creation and annihilation of point defects were studied for SiO2 glass exposed to ultraviolet (UV) and vacuum UV (VUV) lights to improve transparency and radiation toughness of SiO2 glass to UV–VUV laser light. Topologically disordered structure of SiO2 glass featured by the distribution of SiOSi angle is a critical factor degrading transmittance near the fundamental absorption edge. Doping with terminal functional groups enhances the structural relaxation and reduces the number of strained SiOSi bonds by breaking up the glass network without creating the color centers. Transmittance and laser toughness of SiO2 glass for F2 laser is greatly improved in fluorine-doped SiO2 glass…
Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC
2019
Abstract The upgrade of the tracking detectors for the High Luminosity-LHC (HL-LHC) requires the development of novel radiation hard silicon sensors. The development of Depleted Monolithic Active Pixel Sensors targets the replacement of hybrid pixel detectors with radiation hard monolithic CMOS sensors. We designed, manufactured and tested radiation hard monolithic CMOS sensors in the TowerJazz 180 nm CMOS imaging technology with small electrodes pixel designs. These designs can achieve pixel pitches well below current hybrid pixel sensors (typically 50 × 50 μ m ) for improved spatial resolution. Monolithic sensors in our design allow to reduce multiple scattering by thinning to a total si…
Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation
2020
Abstract The stability of black silicon induced junction photodetectors under high-energy irradiation was tested with 11 MeV protons and 12 MeV electrons using fluence of 1 ⋅ 10 10 protons/cm2 and dose of 67 krad(Si) for protons and electrons, respectively. The energies and dose levels were selected to test radiation levels relevant for space applications. The degradation was evaluated through dark current and external quantum efficiency changes during (within 1 h after each step) and after (some days after) full irradiation sequences. Furthermore, the black silicon photodetectors were compared to planar silicon induced junction and planar silicon pn-junction photodetectors to assess the co…
Silicon detectors for the sLHC
2011
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the RandD programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect …
In situ and postradiation analysis of mechanical stress in Al2O3:Cr induced by swift heavy-ion irradiation
2010
Abstract Optical spectroscopy and TEM techniques have been applied to study the radiation damage and correlated mechanical stresses in Al2O3 and Al2O3:Cr single crystals induced by (1–3) MeV/amu Kr, Xe and Bi ion irradiation. Mechanical stresses were evaluated in situ using a piezospectroscopic effect through the shift of the respective lines in ionoluminescence spectra. It was found that dose dependence of the stress level for Xe and Bi ions, when ionization energy loss exceeds the threshold of damage formation via electronic excitations, exhibits several alternate stages showing the build-up and relaxation of stresses. The beginning of relaxation stages is observed at fluences associated …
Radiation-hard semiconductor detectors for SuperLHC
2005
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10^35 cm^(- 2) s(- 1) has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016 cm 2. The CERN-RD50 project ''Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders'' has been established in 2002 to explore…
A gas ionisation Direct-STIM detector for MeV ion microscopy
2015
Abstract Direct-Scanning Transmission Ion Microscopy (Direct-STIM) is a powerful technique that yields structural information in sub-cellular whole cell imaging. Usually, a Si p-i-n diode is used in Direct-STIM measurements as a detector. In order to overcome the detrimental effects of radiation damage which appears as a broadening in the energy resolution, we have developed a gas ionisation detector for use with a focused ion beam. The design is based on the ETH Frisch grid-less off-axis Geiger–Muller geometry. It is developed for use in a MeV ion microscope with a standard Oxford Microbeams triplet lens and scanning system. The design has a large available solid angle for other detectors …