Search results for " Dielectric"

showing 7 items of 67 documents

Céramiques diélectriques commandables pour applications micro-ondes : composites à base de titanate de baryum-strontium et d'un oxyde non ferroélectr…

2001

Since the last decades, dielectric ceramics have been considered as attractive for microwave applications as tunable dielectric resonators or phase shifters. For that, ceramic devices should be tunable – change in dielectric constant with applied voltage- with moderate to low dielectric constant (30 to 1000) and loss tangent as low as possible. To reconcile these properties, composite ceramics based on Ba0.6Sr0.4TiO3 (BSTO) and a non-ferroelectric oxide with a low dielectric constant (MgTiO3 or MgO) were synthesised. The aim of this study was to correlate the microstructure with the dielectric properties, especially the Curie temperature and the dielectric relaxation phenomena.Ceramics with…

attrition[CHIM.MATE] Chemical Sciences/Material chemistrydielectric lossescomposites ceramicsmicrostructurepertes diélectriquesbarium-strontium titanatemicrowave dielectricstunable dielectric resonatorscéramiques compositesdiélectriques hyperfréquencestitanate de baryum-strontiumattrition milling[ CHIM.MATE ] Chemical Sciences/Material chemistryrésonateurs diélectriques accordables[PHYS.COND] Physics [physics]/Condensed Matter [cond-mat][ PHYS.COND ] Physics [physics]/Condensed Matter [cond-mat]
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Artificial dielectric optical structures: A challenge for nanofabrication

1998

Diffractive optical components can be made using multiple level kinoforms or single level artificial dielectric structures. The latter require the fabrication of pillars of equal depth but differing width and spacing. As a demonstration device, the diffractive optic equivalent of a wedge has been made in GaAs for use at 1.15 μm. The need for all pillars to have the same height was met by using a selective etch and a very thin etch-stop layer on AlGaAs. The experimental diffraction efficiency was 87.8%, among the best ever obtained and close to the theoretical maximum of 97.6%. © 1998 American Vacuum Society.

business.product_categoryFabricationMaterials sciencebusiness.industryGeneral EngineeringDielectricDiffraction efficiencySettore ING-INF/01 - ElettronicaWedge (mechanical device)Gallium arsenidechemistry.chemical_compoundOpticsNanolithographychemistryEtching (microfabrication)Nanolithography Diffractive Optics Artificial Dielectrics SemiconductorOptoelectronicsbusinessDiffraction grating
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Polytetrafluoroethylene Films in Rigid Polyurethane Foams' Dielectric Permittivity Measurements with a One-Side Access Capacitive Sensor.

2021

As a non-metallic composite material, widely applied in industry, rigid polyurethane (PUR) foams require knowledge of their dielectric properties. In experimental determination of PUR foams’ dielectric properties protection of one-side capacitive sensor’s active area from adverse effects caused by the PUR foams’ test objects has to be ensured. In the given study, the impact of polytetrafluoroethylene (PTFE) films, thickness 0.20 mm and 0.04 mm, in covering or simulated coating the active area of one-side access capacitive sensor’ electrodes on the experimentally determined true dielectric permittivity spectra of rigid PUR foams is estimated. Penetration depth of the low frequency excitation…

dielectric permittivityMaterials sciencePolymers and PlasticsCapacitive sensing02 engineering and technologyDielectricengineering.materialLow frequency01 natural sciencesArticlelcsh:QD241-441chemistry.chemical_compoundlcsh:Organic chemistryCoatingone-side access0103 physical sciencesComposite materialPenetration depthPolyurethane010302 applied physicsPolytetrafluoroethylenepolyurethane foamscapacitive sensorGeneral Chemistryprotectionpolyurethane foams; dielectric permittivity; capacitive sensor; one-side access; adverse effects; protection; PTFE films021001 nanoscience & nanotechnologychemistryPTFE filmsElectrodeadverse effectsengineering0210 nano-technologyPolymers
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Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

2019

Abstract The structural and the electronic properties of monolayer graphene made by chemical vapor deposition and transferred on various oxide substrates ( SiO 2 , Al 2 O 3 , and HfO 2 ) are investigated by Raman Spectroscopy and Atomic Force Microscopy in order to highlight the influence of the substrate on the features of p-doping obtained by O 2 thermal treatments. By varing the treatment temperature up to 400 °C, the distribution of the reaction sites of the substrates is evaluated. Their total concentration and the consequent highest doping available is determined and it is shown that this latter is linked to the water affinity of the substrate. Finally, by varing the exposure time to …

inorganic chemicalsMaterials scienceDiffusionOxide02 engineering and technologyChemical vapor depositiondoping010402 general chemistry01 natural sciencesGraphene Thermal doping Substrate effectslaw.inventionsymbols.namesakechemistry.chemical_compoundAdsorptionlawGeneral Materials ScienceGrapheneDopinggraphenetechnology industry and agricultureSubstrate (chemistry)General Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesChemical engineeringchemistrysymbols0210 nano-technologyRaman spectroscopyhigh-k dielectrics
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Distribution and generation of traps in SiO2/Al2O3 gate stacks

2007

In this work we combine charge-pumping measurements with positive constant voltage stress to investigate trap generation in SiO2/ Al2O3 n-MOSFET. Trap density has been scanned either in energy or in position based on charge-pumping (CP) measurements performed under different operating conditions in terms of amplitude and frequency of the gate pulse. Our results have revealed that the traps are meanly localized shallow in energy level, deeper in spatial position and they are mostly generated near the Si/SiO2 interface. (C) 2007 Elsevier Ltd. All rights reserved.

interface trapsWork (thermodynamics)Materials sciencecharge pumping (CP)Settore ING-INF/01 - ElettronicaTrap (computing)Stress (mechanics)Position (vector)Electrical and Electronic EngineeringSafety Risk Reliability and QualityBulk trapsbusiness.industryElectrical engineeringCondensed Matter PhysicsAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsPulse (physics)AmplitudeDistribution (mathematics)Control and Systems Engineeringenergy distributionAtomic physicsbusinesshigh-k dielectricsEnergy (signal processing)
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Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection

2018

In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.

lcsh:Applied optics. PhotonicsTechnologyMaterials scienceAtomic and Molecular Physics and OpticInfraredGate dielectricPhysics::Optics02 engineering and technologyDielectricgraphene field effect transistor01 natural sciencesSettore ING-INF/01 - Elettronicalaw.inventionCondensed Matter::Materials Scienceinfrared detectorslaw0103 physical sciencesmicrowave transistorlcsh:QC350-467Electrical and Electronic Engineering010306 general physicsGraphene; graphene field effect transistors; infrared detectors; microwave transistors; Atomic and Molecular Physics and Optics; Electrical and Electronic Engineeringbusiness.industryGraphenePhotoconductivityTransistormicrowave transistorslcsh:TA1501-1820021001 nanoscience & nanotechnologyAtomic and Molecular Physics and Opticsinfrared detector2018-020-021849 ALDOptoelectronicsGraphene0210 nano-technologybusinessddc:600Microwavegraphene field effect transistorslcsh:Optics. LightDC biasIEEE Photonics Journal
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Application of Broadband Dielectric Spectroscopy to Cultural Heritage: characterization and preservation of ancient paper artwork

2016

Within the cultural heritage the characterization and conservation of artworks based on paper represents a significant issue for both restorers and scientists. The paper deterioration is affected by the degree of hydrolytic and oxidative reactions which occur upon aging. Moreover, the durability of cellulose fibers depends on the intrinsic composition/structure of the paper as well as on the conservation conditions, such as temperature and humidity. The structural and dynamical characterization of the cellulose matrix and of the water confined within its pores is therefore of central interest. Our working hypothesis is that WATER DYNAMICS is one of the main determinants of paper degradation…

paper artworks characterization conservation cellulose matrix confined water water dynamics halloysite nanotubes broadband dielectric spectroscopySettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)
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