Search results for " Generator"
showing 10 items of 328 documents
On the designing of densely dispersion-managed optical fiber systems for ultrafast optical communication
2003
We present some theoretical and experimental results which suggest the possibility of constructing a non-empirical methodology of designing optical transmission systems with ultra high bit-rate per channel. Theoretically, we present an average dispersion decreasing densely dispersion-managed (A4dm) fiber system, which exhibits many advantages over the densely dispersion-managed fiber system, such as the possibility of transmitting chirp-free Gaussian pulses at 160 Gbit/s per channel over transoceanic distances, with a reduced energy and minimal intra-channel interaction. Experimentally we present generation of a 160-GHz picosecond pulse train at 1550 nm using multiple four-wave mixing tempo…
Past, present and future of 68Ge/68Ga generators.
2013
(68)Ga represents one of the very early radionuclides applied to positron emission tomography (PET) imaging at a time when even the wording PET itself was not established. Today it faces a renaissance in terms of new (68)Ge/(68)Ga radionuclide generators, sophisticated (68)Ga radiopharmaceuticals, and state-of-the-art clincial diagnoses via positron emission tomography/computed tomography (PET/CT). Thanks to the pioneering achievement of radiochemists in Obninsk, Russia, a new type of (68)Ge/(68)Ga generators became commercially available in the first years of the 21st century. Generator eluates based on hydrochloric acid provided "cationic" (68)Ga instead of "inert" (68)Ga-complexes, openi…
An Efficient NURBS Path Generator for a Open Source CNC
2014
In this paper a NURBS path generator (on the plane XY) is proposed to be developed for those CNC machine tools and robot which are Open Source or Opening Architecture. The goal is to use simple and efficient techniques to manufacture geometries which are very complex, whose main feature is the presence of free-form surfaces and contours. To reach this goal, the NURBS path generator has been optimized in order to enable the user to select among three different options to generate the tool path, using a specific parameter. The three options are respectively called “NURBS interpolation with constant increments of u parameter” (NICU), “NURBS interpolation with constant displacement increments b…
Growth mechanisms and related thermoelectric properties of innovative hybrid networks fabricated by direct deposition of Bi2Se3 and Sb2Te3 on multiwa…
2020
Abstract Flexible thermoelectric generators are an emerging trend in the field of waste heat conversion, as well as wearable and autonomous devices. However, the energy conversion efficiency of the state-of-the-art flexible thermoelectric devices is too low for their wide application and commercialization. In this work, n- and p-type multiwalled carbon nanotube (MWCNT)-thermoelectric material hybrid networks that may become a promising building block for the fabrication of flexible thermoelectric devices are presented. The hybrid networks were fabricated by direct deposition of thermoelectric material (Bi2Se3, Sb2Te3) on the MWCNT networks using physical vapor deposition technique. Growth m…
Experimental determination of the kurtosis of RF noise in microwave low-noise devices
2000
Abstract The degree of the Gaussian nature of the white noise present in microwave low-noise devices is experimentally investigated. The chosen experimental technique consists of simultaneously digitizing four versions of the noise which are amplified by four parallel independent amplifiers. The four independent signals are then used to compute the second, and, to a good approximation, the fourth moment of the noise. The ratio of the fourth moment to the square of the second moment is the kurtosis of the noise. Gaussian processes are characterized by a kurtosis equal to 3. A deviation from this value gives an indication about the degree of non-Gaussian nature of the noise. By using this tec…
Langevin Approach to Understand the Noise of Microwave Transistors
2004
A Langevin approach to understand the noise of microwave devices is presented. The device is represented by its equivalent circuit with the internal noise sources included as stochastic processes. From the circuit network analysis, a stochastic integral equation for the output voltage is derived and from its power spectrum the noise figure as a function of the operating frequency is obtained. The theoretical results have been compared with experimental data obtained by the characterization of an HEMT transistor series (NE20283A, by NEC) from 6 to 18 GHz at a low noise bias point. The reported procedure exhibits good accuracy, within the typical uncertainty range of any experimental determin…
Advanced PSA Bipolar Transistors for Wireless Applications: Measurements of Scattering Parameters and Noise Figure
1994
A complete investigation on the performance of a series of double polysilicon self-aligned (PSA) bipolar transistors in terms of scattering parameters and noise figure is here reported. The devices have been characterized over the 1-4 GHz frequency range in several bias conditions to the aim of assessing the optimum bias values for the best trade-off between noise and gain performance. This is the first part of an extensive investigation currently performed on 5 families of PSA devices having different emitter configuration and size which have been manufactured by SGS-Thomson to undergo a comparative analysis on the global transistor performance.
A Method for Accurate Measurements of Optimum Noise Parameters of Microwave Transistors
1985
A method for measuring losses of the tuner network used as noise source admittance transformer in transistor noise parameter test-set is presented. Since the method is based on noise figure measurements, tuner losses can be determined on-line while performing measurements for determining transistor noise parameters. As experimental verifications the optimum noise parameters of a GaAs FET in the 4 - 12 GHz frequency range, measured through a computer-assisted measuring system, are reported.
Influence Of The Model Parameters On The Noise Performance Of Double-polysilicon BJTs For Microwave LNA's
1997
In the recent post we have measured the noise and the scattering parameters of several series of double polysilicon BJT's over the 2-6 GHz frequency range at different collector current values, according to their emitter finger number. From the experimental data, a noisy circuit model has been extracted based on a T-equivalent network. By means of the correlation matrix techniques, novel analytical expressions of the noise parameters have been derived. As a second step, a sensitivity analysis has been performed for evaluating the influence of each model element on the noise performance. The results show how to improve the characteristics of such devices for a better performance when employe…
Three Different Methods for Determining the Microwave Noise Parameters of HEMT's at Decreasing Temperatures
1998
The noise characteristics of any transistor are usually represented by means of four parameters which are frequency-, bias- and temperature-dependent, similarly to the scattering parameters. The noise parameters are determined by a standard indirect procedure based on multiple noise figure measurements and appropriate data processing techniques requiring a complex instrumentation set-up and skilled operators. As an alterative way, we have shown that the noise parameters of packaged HEAMT's can be computed with very good accuracy from the analysis of a noisy circuit model derived from the scattering parameters plus a single noise figure measurement. A third way exists for the determination o…