Search results for " MIC"
showing 10 items of 11429 documents
Structural characterization of TiO2/TiN O (δ-doping) heterostructures on (1 1 0)TiO2 substrates
2003
Abstract TiO2/TiNxOy δ-doping structures were grown on the top of (1 1 0)TiO2 rutile substrates by low pressure metal-organic vapor phase epitaxy (LP-MOVPE) technique at 750 °C. The samples were analyzed by high resolution transmission electron microscopy (HRTEM), electron energy loss spectroscopy (EELS) and X-ray diffraction techniques (rocking curves and φ-scans). The presence of satellites in the (1 1 0)TiO2 rocking curve revealed the epitaxial growth of 10 period δ-doping structures. The thickness of the TiO2 layers, 84 nm, was deduced from the satellites period. HRTEM observations showed around 1.5 nm thick δ-doping layers, where the presence of nitrogen was detected by EELS. The analy…
Morphological and magnetic analysis of Fe nanostructures on W(110) by using scanning tunneling microscopy and Lorentz microscopy
2016
Abstract We investigated morphological features and magnetic properties of epitaxial Fe nanostructures (films, stripes and nanoparticles) on a W(110) surface with monoatomic steps preferentially along the direction. The nanostructures were prepared in ultra-high vacuum by using electron-beam evaporation and subsequent annealing at different temperatures. Scanning tunneling microscopy measurements in-situ revealed elongated Fe nanostructures with aspect ratios of up to . The observable shape and orientation (along or perpendicular to the monoatomic steps of the substrate) of the nanostructures depended substantially on the preparation parameters. By capping the system with 7 monolayers of Pt…
Rhodamine (B) photocatalysis under solar light on high crystalline ZnO films grown by home-made DC sputtering
2018
Abstract ZnO thin films were deposited by home-made DC sputtering of zinc target under mixed gases (Argon, Oxygen) plasma on glass substrates. Films were deposited by varying oxygen partial pressure (PO2) from 0.09 to 1.3 mbar in the deposition chamber, at a fixed substrate temperature of 100 °C. The samples were characterized by photoluminescence (PL), X-ray diffraction (XRD), optical transmissions (UV–vis), scanning electron microscopy (SEM) and electrical (Hall effect) measurements. The results indicate that by varying the oxygen pressure in the deposition chamber, the films show a precise and well defined photoluminescence emissions for each range of pressure covering almost the entire …
Positron annihilation characterization of free volume in microand macro-modified Cu0.4Co0.4Ni0.4Mn1.8O4ceramics
2016
Free volume and pore size distribution size in functional micro and macro-micro-modified Cu0.4Co0.4Ni0.4Mn1.8O4 ceramics are characterized by positron annihilation lifetime spectroscopy in comparison with Hg-porosimetry and scanning electron microscopy technique. Positron annihilation results are interpreted in terms of model implication positron trapping and ortho-positronium decaying. It is shown that free volume of positron traps are the same type for macro and micro modified Cu0.4Co0.4Ni0.4Mn1.8O4 ceramics. Classic Tao-Eldrup model in spherical approximation is used to calculation of the size of nanopores smaller than 2 nm using the ortho-positronium lifetime.
The interdependence of structural and electrical properties in TiO2/TiO/Ti periodic multilayers
2013
International audience; Multilayered structures with 14-50 nm periods composed of titanium and two different titanium oxides, TiO and TiO2, were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. The structure and composition of these periodic TiO2/TiO/Ti stacks were investigated by X-ray diffraction and transmission electronic microscopy techniques. Two crystalline phases, hexagonal close packed Ti and face centred cubic TiO, were identified in the metallic-rich sub-layers, whereas the oxygen-rich ones comprised a mixture of amorphous TiO2 and rutile phase. DC electrical resistivity rho measured for temperatures ranging from 300 to 500 K exhibited a meta…
Effect of Mn doping on the low-temperature synthesis of tricalcium phosphate (TCP) polymorphs
2019
Abstract Effect of Mn doping on the low-temperature synthesis of tricalcium phosphate (TCP) polymorphs was demonstrated in α- and β-TCP polymorphs prepared by wet precipitation method under identical conditions and annealed at 700 °C. Calcium phosphates with Mn doping level in the range from 1 to 5 mol% were studied and the formation of desired polymorph was controlled by varying Mn content in as-prepared precipitates. It was found that increasing Mn content resulted in the formation of β-TCP, while α-TCP was obtained with low Mn doping level, whereas a mixture of two polymorphs was obtained for intermediate Mn concentrations. Moreover, doping with Mn ions allowed the synthesis of β-TCP at …
Induced crystallographic changes in Cd1−xZnxO films grown on r-sapphire by AP-MOCVD: the effects of the Zn content when x ≤ 0.5
2020
High-resolution X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques were used to investigate, as a function of the nominal Zn content in the range of 0–50%, the out-of-plane and in-plane crystallographic characteristics of Cd1−xZnxO films grown on r-plane sapphire substrates via atmospheric pressure metal–organic chemical vapor deposition. The study is conducted to search for knowledge relating to the structural details during the transition process from a rock-salt to a wurtzite structure as the Zn content increases in this CdO–ZnO system. It has been found that it is possible to obtain films exhibiting a single (001) cubic orientation with good …
Reactive Sintering of molybdenum disilicide by Spark Plasma Sintering from mechanically activated powder mixtures: Processing parameters and properti…
2008
Abstract Dense molybdenum disilicide with a nano-organized microstructure was synthesized by mechanical activation, by producing nanostructured agglomerates of a 1:2 mixture of Mo and Si, followed by the synthesis/consolidation in one step using SPS technology. In order to synthesize a dense molybdenum disilicide with a perfectly controlled microstructure, an investigation of the influence of Spark Plasma Sintering processing parameters (temperature, heating rate, mechanical pressure and holding time) on the chemical composition and the microstructure characteristics has been performed. The present work shows also that the so-obtained materials present better oxidation resistance in compari…
Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
2011
Abstract The growth of GaN nanowires by means of plasma assisted molecular beam epitaxy directly on Si(1 1 1) has been investigated as a function of temperature. Statistical analysis of scanning electron microscopy pictures taken for different growth temperatures has revealed that density, diameter, length and length dispersion of nanowires were strongly dependent on temperature. Length dispersion, in particular, was found to be significant at high temperature. These features have been assigned to the different duration of the nucleation process with temperature, namely to the dependence with temperature of the time necessary for the size increase of the three-dimensional precursors up to a…
Enhancement of the dielectric response through Al-substitution in La1.6Sr0.4NiO4 nickelates
2016
The structures and dielectric properties of La1.6Sr0.4Ni1−xAlxO4 (x = 0, 0.2 and 0.4) ceramics elaborated using the Pechini method were studied for the first time. The same unique tetragonal phase was found in all compounds. The lattice parameters were found using Rietveld refinement. The surface morphology characterization and elemental analysis of these samples were respectively carried out using scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). A giant dielectric response was observed in these ceramics, and one dielectric relaxation was found. The substitution of nickel with aluminum results in a colossal dielectric constant value (>106). The dielectric l…