Search results for " Magnetic materials"
showing 10 items of 4666 documents
The effect of noise, a constant background, and bit depth on the phase retrieval of pure phase objects
2021
Acknowledgements – The authors are supported by the postdoctoral project (1.1.1.2/16/I/001; 1.1.1.2/ VIAA/1/16/199, State Education Development Agency, Republic of Latvia).
Surfactant-Mediated Morphology and Photocatalytic Activity of α‑Ag2WO4 Material
2018
In the present work, the morphology (hexagonal rod-like vs cuboid-like) of an α-Ag2WO4 solid-state material is manipulated by a simple controlled-precipitation method, with and without the presence of the anionic surfactant sodium dodecyl sulfate (SDS), respectively, over short reaction times. Characterization techniques, such as X-ray diffraction analysis, Rietveld refinement analysis, Fourier-transform (FT) infrared spectroscopy, FT Raman spectroscopy, UV–vis spectroscopy, transmission electron microscopy (TEM), high-resolution TEM, selected area electron diffraction, energy-dispersive X-ray spectroscopy, field emission-scanning electron microscopy (FE-SEM), and photoluminescence emission…
Low-temperature single crystal X-ray diffraction and high-pressure Raman studies on [(CH3)2NH2]2[SbCl5]
2007
The structure of bis(dimethylammonium) pentachloroantimonate(III), [(CH{sub 3}){sub 2}NH{sub 2}]{sub 2}[SbCl{sub 5}], BDP, was studied at 15 K and ambient pressure by single-crystal X-ray diffraction as well as at ambient temperature and high pressures up to 4.87(5) GPa by Raman spectroscopy. BDP crystallizes in the orthorhombic Pnma space group with a=8.4069(4), b=11.7973(7), c=14.8496(7) A, and Z=4; R{sub 1}=0.0381, wR{sub 2}=0.0764. The structure consists of distorted [SbCl{sub 6}]{sup 3-} octahedra forming zig-zag [{l_brace}SbCl{sub 5}{r_brace}{sub n}]{sup 2n-} chains that are cross-linked by dimethylammonium [(CH{sub 3}){sub 2}NH{sub 2}]{sup +} cations. The organic and inorganic substr…
Effect of Er3+-doping on 65GeS2-25Ga2S3-10CsCl glass probed by annihilating positrons
2019
Abstract Effect of Er3+-doping resulting in pronounced mid-IR fluorescence functionality was examined first in chalcohalide 65GeS2-25Ga2S3-10CsCl glass using positron annihilation lifetime (PAL) spectroscopy. The detected PAL spectra were reconstructed from unconstrained x2-term analysis employing two-state simple trapping model for one kind of positron trapping free-volume defects, the parameterization being performed at the example of 65GeS2-25Ga2S3-10CsCl glass doped with 0.6 at. % of Er3+. The observed decrease in positron trapping rate was proved to be primary void-evolution process in this Er-activated glass, like in many other chalcogenide glasses affected by rare earth doping. The n…
Novel qutrit circuit design for multiplexer, De-multiplexer, and decoder
2022
AbstractDesigning conventional circuits present many challenges, including minimizing internal power dissipation. An approach to overcoming this problem is utilizing quantum technology, which has attracted significant attention as an alternative to Nanoscale CMOS technology. The reduction of energy dissipation makes quantum circuits an up-and-coming emerging technology. Ternary logic can potentially diminish the quantum circuit width, which is currently a limitation in quantum technologies. Using qutrit instead of qubit could play an essential role in the future of quantum computing. First, we propose two approaches for quantum ternary decoder circuit in this context. Then, we propose a qua…
Vortex dynamics in rotating counterflow and plane Couette and Poiseuille turbulence in superfluid Helium
2008
An equation previously proposed to describe the evolution of vortex line density in rotating counterflow turbulent tangles in superfluid helium is generalized to incorporate nonvanishing barycentric velocity and velocity gradients. Our generalization is compared with an analogous approach proposed by Lipniacki, and with experimental results by Swanson et al. in rotating counterflow, and it is used to evaluate the vortex density in plane Couette and Poiseuille flows of superfluid helium.
High Bias Voltage CZT Detectors for High-flux Measurements
2017
In this work, we present the performance of new travelling heater method (THM) grown CZT detectors, recently developed at IMEM-CNR Parma, Italy. Thick planar detectors (3 mm thick) with gold electroless contacts on CZT crystals grown by Redlen Technologies (Victoria BC, Canada) were realized, with a planar cathode covering the detector surface (4.1 x 4.1 mm(2)) and a central anode (2 x 2 mm(2)) surrounded by a guard ring electrode. The detectors, characterized by low leakage currents at room temperature (4.7 nA/cm(2) at 1000 V/cm), allow good room temperature operation even at high bias voltages (> 7000 V/cm). At low rates, the detectors exhibit an energy resolution around 4 % FWIEM at 59.5…
Room temperature synthesis of lanthanum phosphates with controlled nanotexture as host for Ln(III) through the Epoxide Route
2022
AbstractHerein, the Epoxide Route, a one-pot room temperature alkalinization method based on the reaction between a nucleophile and an epoxide, has been employed to synthesize LaPO4 in the form of a Rhabdophane phase. The intrinsic features of this synthetic approach allow the reaction to be followed by pH monitoring, making possible the identification of the different precipitation steps involved in the formation of the solid. Once demonstrated the effectiveness of this chemical methodology, the size and shape of the LaPO4 particles were controlled by varying the identity and proportion of the organic co-solvents employed to perform the reaction. By these means, crystalline particles with …
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes
2016
Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed
Effect of the Si doping on the properties of AZO/SiC/Si heterojunctions grown by low temperature pulsed laser deposition
2020
Abstract The structural and photoelectrical properties of Al-doped ZnO (AZO)/SiC/p-Si and AZO/SiC/n-Si heterojunctions, fabricated at low temperature by pulsed laser deposition, were investigated by means of a number of techniques. Raman analysis indicates that SiC layers have the cubic 3C-SiC phase, whilst X-ray diffraction measurements show that AZO films exhibit a hexagonal wurtzite structure, highly textured along the c-axis, with average crystallites size of 35.1 nm and lattice parameter c of 0.518 nm. The homogeneous and dense surface morphology observed by scanning electron microscopy was confirmed by atomic force microscopy images. Moreover, UV–Vis-NIR spectra indicated a high trans…