Search results for " Polarization"
showing 10 items of 668 documents
A nondestructive analysis of the B diffusion in Ta–CoFeB–MgO–CoFeB–Ta magnetic tunnel junctions by hard x-ray photoemission
2010
This work reports on hard x-ray photoelectron spectroscopy (HAXPES) of CoFeB based tunnel junctions. Aim is to explain the role of the boron diffusion for the observed improvement of the tunneling magnetoresistance ratio with increasing annealing temperature. The high bulk sensitivity of HAXPES was used as a nondestructive technique to analyze CoFeB–MgO–CoFeB magnetic tunnel junctions. The investigated samples were processed at different annealing temperatures from 523 to 923 K. Hard x-ray core level spectroscopy reveals an enforced diffusion of boron from the CoFeB into the adjacent Ta layer with increasing annealing temperature. The dependence of the tunneling magnetoresistance on the ann…
Frequency tunable polarization and intermodal modulation instability in high birefringence holey fiber
2009
International audience; We present an experimental analysis of polarization and intermodal noise-seeded parametric amplification, in which dispersion is phase matched by group velocity mismatch between either polarization or spatial modes in birefringent holey fiber with elliptical core composed of a triple defect. By injecting quasi-CW intense linearly polarized pump pulses either parallel or at 45 degrees with respect to the fiber polarization axes, we observed the simultaneous generation of polarization or intermodal modulation instability sidebands. Furthermore, by shifting the pump wavelength from 532 to 625 nm, we observed a shift of polarization sidebands from 3 to 8 THz, whereas int…
Phonon-induced spin relaxation of conduction electrons in silicon crystals
2014
Experimental works managing electrical injection of spin polarization in n-type and p-type silicon have been recently carried out up to room-temperature. In spite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on phonon-induced electron spin depolarization in silicon structures, in a wide range of values of lattice temperature, doping concentration and amplitude of external fields, is still at a developing stage. In order to investigate the spin transport of conduction electrons in lightly doped n-type Si crystals, a set of semiclassical multiparticle Monte Carlo simulations has been carried out. The mean spin …
Preparation of Heusler thin films: The quaternary alloy CO2Fe0.5Mn0.5Si
2008
In this work the basic strategies for the preparation of CO2Mn0.5Fe0.5Si as an example for Heusler alloy thin films will be described. Texture and magnetic properties of these films will be discussed, especially with regard to different buffer layers and annealing temperatures. Finally, we will show the integration of Heusler thin films into magnetic tunnel junctions (MTJs) and calculate the effective spin polarization. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Preparation and Investigation of Interfaces of Co2Cr1−x Fe x Al Thin Films
2013
In the framework of spin polarization investigations of Heusler compounds by the measurement of the magnetoresistance (TMR) of tunneling junctions with AlO x barrier special emphasis is put on the role of the interfaces.
Spin-resolved terahertz spectroscopy
2016
As such, terahertz spectroscopy cannot resolve the spin structure of conducting particles. Here we introduce the spin sensitivity to terahertz spectroscopy by using the spin-valve configuration of the sample. As a result, the number density and momentum scattering time of conduction electrons in a ferromagnetic metal can be resolved according to their spin.
Epitaxial film growth and magnetic properties ofCo2FeSi
2006
We have grown thin films of the Heusler compound ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ by RF magnetron sputtering. On (100)-oriented MgO substrates we find fully epitaxial (100)-oriented and $L{2}_{1}$ ordered growth. On ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}(11\overline{2}0)$ substrates, the film growth is (110)-oriented, and several in-plane epitaxial domains are observed. The temperature dependence of the electrical resistivity shows a power law with an exponent of $7∕2$ at low temperatures. Investigation of the bulk magnetic properties reveals an extrapolated saturation magnetization of $5.0{\ensuremath{\mu}}_{B}∕\mathrm{f.u.}$ at $0\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The films on $…
Lattice Instability and Competing Spin Structures in the Double Perovskite InsulatorSr2FeOsO6
2013
The semiconductor Sr2FeOsO6, depending on temperature, adopts two types of spin structures that differ in the spin sequence of ferrimagnetic iron-osmium layers along the tetragonal c axis. Neutron powder diffraction experiments, 57Fe Mossbauer spectra, and density functional theory calculations suggest that this behavior arises because a lattice instability resulting in alternating iron-osmium distances fine-tunes the balance of competing exchange interactions. Thus, Sr2FeOsO6 is an example of a double perovskite, in which the electronic phases are controlled by the interplay of spin, orbital, and lattice degrees of freedom.
Spin-polarized photoelectrons resonantly excited by circularly polarized light from a fractional Ag film on GaAs(100)
2013
We demonstrate a finite spin polarization of photoelectrons emitted from GaAs(100) covered by a fractional Ag film. The photoemission yield shows a sharp maximum for intermediate coverage and the spin polarization increases with increasing laser intensity. Photoelectrons are excited by circularly polarized 100 fs laser pulses of 800 nm wavelength. We recorded the photoemitted electrons using a photoemission electron microscope combined with a Mott spin polarimeter. The spin polarization is analyzed in dependence on the excitation frequency and intensity and on the average thickness of the silver film. The results are explained by a model combining multiphoton photoemission and optical field…
Unidirectional Spin Hall Magnetoresistance as a Tool for Probing the Interfacial Spin Polarization of Co2MnSi
2019
Materials with high spin polarization, such as Heusler compounds, are required for efficient spintronics. The authors propose an approach to probe the transport spin polarization at interfaces, using the recently discovered unidirectional spin Hall magnetoresistance. They show that insertion of thin Ag(001) layers clearly increases the interfacial spin polarization of the Heusler compound Co${}_{2}$MnSi, which is crucial for giant-magnetoresistance devices.