Search results for " SOLID"

showing 10 items of 1333 documents

Magnetic and structural study of (Fe1−Co )62 Nb8B30 bulk amorphous alloys

2004

Abstract The electric and magnetic properties of rapidly quenched (Fe 1− x Co x ) 62 Nb 8 B 30 bulk metallic glasses were studied with x =0, 0.33 and 0.50. The Curie temperature in the amorphous state was found to be about 245 °C for the Co-free alloy, 290 °C for x =0.33 and 201 °C for x =0.50, while the crystallization temperature is varying within 15° only around 600 °C. The change in T C correlates with the change in Mossbauer parameters. An interesting flattening effect of annealing on the hysteresis loop was observed which increases with the Co content. The resistivity could not be improved above 152 μΩ cm, which limits the high frequency applications of these alloys.

Amorphous metalMaterials scienceCondensed matter physicsAnnealing (metallurgy)Mechanical EngineeringMetallurgyCondensed Matter PhysicsMagnetic hysteresisAmorphous solidlaw.inventionMagnetic anisotropyMechanics of MaterialsElectrical resistivity and conductivitylawCurie temperatureGeneral Materials ScienceCrystallizationMaterials Science and Engineering: A
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Electrical resistivity of amorphous simple metals at moderately low temperatures

1999

Abstract The dependence of electrical resistivity ρ ( T ) on temperature T in a region of moderate temperatures is considered for amorphous simple metals. It is shown within the Faber–Ziman theory that the ratio [ ρ ( T )− ρ (0)]/ T 2 has a maximum in the temperature region 10 K⩽ T ⩽100 K The theory is illustrated by numerical calculations performed for hard-sphere models of amorphous Mg and Zn.

Amorphous metalMaterials scienceCondensed matter physicsMagnesiumchemistry.chemical_elementHard spheresCondensed Matter PhysicsRotonElectronic Optical and Magnetic MaterialsAmorphous solidTransition metalchemistryElectrical resistivity and conductivityElectrical and Electronic EngineeringElectron scatteringPhysica B: Condensed Matter
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<title>Holographic properties of dielectric crystals and amorphous semiconductor films</title>

2001

Holographic recording properties and mechanisms are analyzed and compared in dielectric electrooptic crystals (EOC), dielectric colored alkali halide crystals (AHC) and amorphous semiconductor films (ASF) basing on author's investigations as well as on the literature data. Holographic photosensitivity parameters are introduced enabling the characterization of the recording mechanism efficiency independently of the particular optical and geometrical sample parameters, and allowing also for recording optimization. Ultimate specific recording energies for EOC, AHC and ASF are theoretically estimated. It is concluded that the ultimate recording energy for both crystalline and amorphous material…

Amorphous semiconductorsMaterials sciencebusiness.industryOptical engineeringHolographyDielectricCharacterization (materials science)Amorphous solidlaw.inventionOpticslawbusinessMaterial propertiesHolographic recordingOptics of Crystals
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Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells

2012

We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions, improvements of ≈10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface.

Amorphous siliconMaterials sciencePhysics and Astronomy (miscellaneous)Siliconbusiness.industrySurface plasmonchemistry.chemical_elementhydrogenated amorphous silicon (a-Si:H) solar cellsSubstrate (electronics)Amorphous solidchemistry.chemical_compoundchemistrysurface plasmon polaritonOptoelectronicsbusinessShort circuitPlasmonTransparent conducting film
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Crystallization kinetics of amorphous SiC films: Influence of substrate

2005

Abstract The crystallization kinetics of amorphous silicon carbide films was studied by means of X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films were deposited by radio frequency (r.f.) magnetron sputtering on glassy carbon and single crystalline silicon substrates, respectively. TEM micrographs and XRD patterns show the formation of nano-crystalline β-SiC with crystallite sizes in the order of 50 nm during annealing at temperatures between 1200 and 1600 °C. A modified Johnson–Mehl–Avrami–Kolmogorov (JMAK) formalism was used to describe the isothermal transformation of amorphous SiC into β-SiC as an interface controlled, three-dimensional growth processes fr…

Amorphous siliconMaterials scienceSiliconGeneral Physics and Astronomychemistry.chemical_elementGlassy carbonlaw.inventionchemistry.chemical_compoundsilicon carbidelawcrystallization kineticsCrystalline siliconCrystallizationsputter depositionSurfaces and InterfacesGeneral ChemistrySputter depositionCondensed Matter PhysicsSurfaces Coatings and FilmsAmorphous solidamorphous filmsCrystallographychemistryChemical engineering[ CHIM.MATE ] Chemical Sciences/Material chemistryCrystalliteApplied Surface Science
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Processing of amorphous Si by pulsed laser irradiation at different wavelengths

2012

Amorphous Si thin films deposited on thermally oxidized Si wafers have been processed by the 2 nd and 3 rd harmonics of Nd:YAG laser. Surface modification of amorphous silicon layers have been investigated by scanning electron microscopy before and after chemical etching of processed silicon films. The super-lateral crystal growth regime was achieved with laser fluence of 280 mJ/cm 2 for the 2 nd harmonics and 155 mJ/cm 2 for the 3 rd harmonics. The grain size in polycrystalline Si samples prepared by successive crystallization in the lateral growth regime is about 0.5 - 1 μm.

Amorphous siliconMaterials scienceSiliconbusiness.industrychemistry.chemical_elementCrystal growthLaserFluenceAmorphous solidlaw.inventionchemistry.chemical_compoundOpticschemistrylawOptoelectronicsCrystalliteThin filmbusinessIOP Conference Series: Materials Science and Engineering
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Amorphous Silicon Nanotubes via Galvanic Displacement Deposition

2013

Amorphous silicon nanotubes were grown in a single step into a polycarbonate membrane by a galvanic displacement reaction conducted in aqueous solution. In order to optimize the process, a specifically designed galvanic cell was used. SEM images, after polycarbonate dissolution, showed interconnected nanotube bundles with an average length of 18 μm and wall thickness of 38 nm.The deposited silicon was revealed by EDS analysis, whilst X-ray diffraction and Raman spectroscopy showed that nanotubes have an amorphous structure. Silicon nanotubes were also characterized by photo-electrochemical measurements that showed n-type conductivity and optical gap of ~1.6 eV. Keywords: Silicon nanotubes, …

Amorphous siliconSilicon nanotubes dispalcement deposition nanostructures lithium batteries solar cellsNanotubeMaterials scienceSiliconNanocrystalline siliconchemistry.chemical_elementNanotechnologyAmorphous solidlcsh:Chemistrysymbols.namesakechemistry.chemical_compoundSettore ING-IND/23 - Chimica Fisica Applicatalcsh:Industrial electrochemistrylcsh:QD1-999chemistryvisual_artElectrochemistrysymbolsvisual_art.visual_art_mediumGalvanic cellPolycarbonateComposite materialRaman spectroscopylcsh:TP250-261
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Electroluminescence and transport properties in amorphous silicon nanostructures

2006

We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend …

Amorphous siliconVISIBLE ELECTROLUMINESCENCEMaterials sciencePhysics and Astronomy (miscellaneous)nanostructures; silicon; elecroluminescenceExcitonBioengineeringElectronQUANTUM DOTSElectroluminescenceSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materiachemistry.chemical_compoundnanostructuresGeneral Materials ScienceSI-RICH SIO2Electrical and Electronic EngineeringLIGHT-EMITTING DEVICESEngineering (miscellaneous)business.industryMechanical EngineeringsiliconGeneral ChemistryAtmospheric temperature rangeAmorphous solidCHEMICAL-VAPOR-DEPOSITIONelecroluminescenceNanocrystalchemistryMechanics of MaterialsOptoelectronicsMaterials Science (all)businessLuminescenceNanotechnology
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Immobilization of functionalized lipids in a random poly(methacrylate) copolymer monolayer

1995

It is shown that a monolayer of random poly(methacrylate) copolymer with a hydrophobic and a hydrophilic substituent exhibits a transition from the fluid to amorphous state. Above this transition any amphiphilic molecules mixed with the monolayer are immobile. Furthermore, such functionalized lipids are immobilized in the monolayer during the Langmuir-Blodgett transfer. The hydrophilic head-groups of the biotin-lipids remain on the formerly water-adjacent side of the monolayer, even if this side is exposed to air

Amphiphilic moleculeMaterials scienceMethacrylate copolymerMechanical EngineeringSubstituentMethacrylatePoly methacrylateAmorphous solidchemistry.chemical_compoundchemistryMechanics of MaterialsPolymer chemistryMonolayerCopolymerlipids (amino acids peptides and proteins)General Materials ScienceAdvanced Materials
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Glass-forming derivatives of 2-cyano-2-(4H-pyran-4-ylidene) acetate for light-amplification systems

2019

Abstract A series of 2-cyano-2-(4H-pyran-4-ylidene) acetate derivatives with triphenyl and 9H-carbazole moieties were synthesized and investigated, mostly for potential applications in organic solid state lasers. Synthesized compounds show remarkable amorphous film formation ability, tunable thermal properties (thermal stability varies from 190 °C to 387 °C and glass transition temperature from 94 °C up to 141 °C) with light absorption from 400 nm to 600 nm and photoluminescence from 600 nm up to 800 nm. Dyes with incorporated mono-styryl- electron donating fragment (KTB, KTBC and KTB3K) showed higher photoluminescence quantum yield (PLQY) (from 16% up to 23%), significantly lower amplified…

Amplified spontaneous emissionDye laserPhotoluminescenceMaterials scienceProcess Chemistry and TechnologyGeneral Chemical EngineeringQuantum yield02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnologyPhotochemistryLaser01 natural sciences0104 chemical sciencesAmorphous solidlaw.inventionlawThermal stability0210 nano-technologyGlass transitionDyes and Pigments
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