Search results for " Semiconductor"
showing 10 items of 332 documents
Tin-related double acceptors in gallium selenide single crystals
1998
Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer…
Above-bandgap ordinary optical properties of GaSe single crystal
2009
We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-quality pseudodielectric function 〈ε(E)〉 = 〈ε1(E)〉+i〈ε2(E)〉 and pseudorefractive index 〈N(E)〉 = 〈n(E)〉+i〈k(E)〉 spectra were measured by spectroscopic ellipsometry from 0.73 to 6.45 eV at room temperature for the light polarization perpendicular to the optic axis (math⊥math). The 〈ε〉 spectrum exhibited several interband-transition critical-point structures. Analysis of second-energy derivatives calculated numerically from the measured data yielded the critical-point energy values. Carmen.Martinez-Tomas@uv.es
Neutron irradiation defects in gallium sulfide: Optical absorption measurements
1997
Gallium sulfide single crystals have been irradiated with different thermal neutron doses. Defects introduced by neutron irradiation turn out to be optically active, giving rise to absorption bands with energies ranging from 1.2 to 3.2 eV. Bands lying in the band-gap exhibit Gaussian shape. Their energies and widths are independent of the irradiation dose, but their intensities are proportional to it. Thermal annealing is completed in two stages, ending at around 500 and 720 K, respectively. Centers responsible for the absorption bands are proposed to be gallium-vacancy-galliuminterstitial complexes in which the distance between the vacancy (acceptor) and the interstitial (donor) determines…
Electric conduction in solids: a pedagogical approach supported by laboratory measurements and computer modelling environments
2008
In this paper we present a pedagogic approach aimed at modeling electric conduction in semiconductors, built by using NetLogo, a programmable modeling environment for building and exploring multi‐agent systems. ‘Virtual experiments’ are implemented to confront predictions of different microscopic models with real measurements of electric properties of matter, such as resistivity. The relations between these electric properties and other physical variables, like temperature, are, then, analyzed.
The "Livio Scarsi" X-Ray Facility at University of Palermo for Device Testing
2015
In this work, we report on the characteristics of the Livio Scarsi X-ray facility at University of Palermo. The facility is able to produce low energy X rays, within the energy range of 0.1-60 keV, with fluence rates ranging from 105-108 photons/mm2 s. The laboratory is equipped with an innovative digital detection system, based on semiconductor detectors (Si and CdTe detectors), able to provide accurate and precise estimation of the fluence rate, the energy and the exposure of X rays, even at high counting rate conditions. Instrumentation for electrical characterization (DC-AC) of semiconductor devices, for both off-line and on-line (i.e. during the irradiation) measurements, is also avail…
Digital techniques for high-rate high-resolution radiation measurements
2014
Digital pulse processing (DPP) techniques are increasingly used in the development of modern spectroscopic systems. DPP systems, based on direct digitizing and processing of detector signals (preamplifier output signals), ensure higher flexibility, stability, lower dead time, higher throughput and better energy resolution than traditional pulse processing systems. In this work, we present our progress in the development of DPP systems for high-rate high-resolution radiation measurements. An innovative digital system, able to perform multi-parameter analysis (input counting rate, pulse height, pulse shape, event arrival time, etc.) even at high photon counting rates is presented. Experimenta…
A comparison of two innovative customer power devices for Smart Micro-Grids
2015
The paper presents a comparison of two prototypes of innovative Customer Power Devices designed for applications in Smart Micro-Grids. The devices are both equipped with Energy Storage Systems, consisting in Lithium batteries and have been assembled, independently, by the DIAEE of the University of Rome 'La Sapienza' and the DEIM of the University of Palermo in collaboration with the Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA). In the paper, the characteristics and the operating modes of the devices are examined and some consideration on their application in Low Voltage Smart Micro-Grids are provided. © 2015 IEEE.
UPS fuel cell based: An innovative back-up system
2007
The aim of the paper is to evaluate the technical feasibility and aspects related to the use, in an Uninterruptible Power Supply (UPS), of fuel cells instead of traditional electrochemical batteries. The proposed system, named UPS-FCB (Fuel Cell Based) presents a modular and versatile system configuration; particularly it is possible to integrate it with traditional UPS. Moreover the system features can be modified in terms of power, reliability, back-up time, etc., by changing the power devices. A detailed experimental analysis has been carried out on a passive stand-by UPS integrated with a FCB; experimental results can be easily extended to the other possible system architectures. © 2007…
Electrical characterization of deoxyribonucleic acid hybridization in metal-oxide-semiconductor-like structures
2012
In this work, metal-oxide-semiconductor (MOS)-like sensors in which deoxyribonucleic acid (DNA) strands are covalently immobilized either on Si oxide or on a gold surface were electrically characterized. Si oxide fabrication process allowed us to have a surface insensitive to the solution pH. A significant shift in the flat band voltage was measured after single strand DNA immobilization (+0.47 +/- 0.04 V) and after the complementary strand binding (+0.07 +/- 0.02 V). The results show that DNA sensing can be performed using a MOS structure which can be easily integrated in a more complex design, thus avoiding the problems related to the integration of micro-electrochemical cells.
Effect of a fluctuating electric field on electron spin dephasing in III-V semiconductors
2011
In the present work we investigate electron spin relaxation in low-doped n-type GaAs semiconductor bulks driven by a static electric field. The electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin relaxation lengths are computed through the D’yakonov-Perel process, which is the only relevant relaxation mechanism in zinc-blende semiconductors. Since semiconductor based devices are always imbedded into a noisy environment that can strongly affect their performance, the decay of initial spin polarization of conduction electrons is calculat…