Search results for " carbide"
showing 10 items of 101 documents
Friction Model for Tool/Work Material Contact Applied to Surface Integrity Prediction in Orthogonal Cutting Simulation
2017
Abstract Tribological behavior at both tool/chip and tool/work material interfaces should be highly considered while simulating the machining process. In fact, it is no longer accurate to suppose one independent constant friction coefficient at the tool/chip interface, since in reality it depends on the applied contact conditions, including the sliding velocity and pressure. The contact conditions at both above mentioned interfaces may affect the thermal and mechanical phenomena and consequently the surface integrity predictions. In this article, the influence of contact conditions (sliding velocity) on the tribological behavior of uncoated tungsten carbide tool against OFHC copper work mat…
Effect of graphene substrate type on formation of Bi2Se3 nanoplates
2019
AbstractKnowledge of nucleation and further growth of Bi2Se3 nanoplates on different substrates is crucial for obtaining ultrathin nanostructures and films of this material by physical vapour deposition technique. In this work, Bi2Se3 nanoplates were deposited under the same experimental conditions on different types of graphene substrates (as-transferred and post-annealed chemical vapour deposition grown monolayer graphene, monolayer graphene grown on silicon carbide substrate). Dimensions of the nanoplates deposited on graphene substrates were compared with the dimensions of the nanoplates deposited on mechanically exfoliated mica and highly ordered pyrolytic graphite flakes used as refer…
Crystallization kinetics of amorphous SiC films: Influence of substrate
2005
Abstract The crystallization kinetics of amorphous silicon carbide films was studied by means of X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films were deposited by radio frequency (r.f.) magnetron sputtering on glassy carbon and single crystalline silicon substrates, respectively. TEM micrographs and XRD patterns show the formation of nano-crystalline β-SiC with crystallite sizes in the order of 50 nm during annealing at temperatures between 1200 and 1600 °C. A modified Johnson–Mehl–Avrami–Kolmogorov (JMAK) formalism was used to describe the isothermal transformation of amorphous SiC into β-SiC as an interface controlled, three-dimensional growth processes fr…
Discovery of new boron-rich chalcogenides: Orthorhombic B6X (X=S, Se)
2020
The authors thank T. Chauveau (LSPM) for help with Rietveld analysis, A. Jamali (LRCS) for assistance with SEM measurements, and Drs. Y. Tange (SPring-8) and N. Guignot (SOLEIL) for help in synchrotron experiments that were carried out during beamtimes allocated to proposals 2017A1047 & 2018A1121 at SPring-8 and proposal 20170092 at SOLEIL. Ab initio calculations have been performed using Rurik and Arkuda supercomputers. This work was financially supported by the European Union’s Horizon 2020 Research and Innovation Programme under Flintstone2020 project (grant agreement No. 689279). Z.W. thanks the National Science Foundation of China (grant No. 11604159). A.R.O. thanks the Russian Ministr…
Investigation of Silicon Carbide Polytypes by Raman Spectroscopy
2014
Abstract Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure
Wear modelling in mild steel orthogonal cutting when using uncoated carbide tools
2007
Abstract Wear prediction in machining has been recently studied by FEM although the use of numerical methods for such applications is still a very challenging research issue. In fact, wear phenomenon involves many aspects related to process mechanics which require a very accurate modelling. In other words, only a very punctual code set-up can help the researchers in order to obtain consistent results in FE analysis. The high relative velocity between chip and tool requires effective material models as well as friction modelling at the interface. Moreover the prediction of temperature distribution is another critical task; in the paper some different procedures are discussed. Subsequently a …
First Characterization of Novel Silicon Carbide Detectors with Ultra-High Dose Rate Electron Beams for FLASH Radiotherapy
2023
Ultra-high dose rate (UHDR) beams for FLASH radiotherapy present significant dosimetric challenges. Although novel approaches for decreasing or correcting ion recombination in ionization chambers are being proposed, applicability of ionimetric dosimetry to UHDR beams is still under investigation. Solid-state sensors have been recently investigated as a valuable alternative for real-time measurements, especially for relative dosimetry and beam monitoring. Among them, Silicon Carbide (SiC) represents a very promising candidate, compromising between the maturity of Silicon and the robustness of diamond. Its features allow for large area sensors and high electric fields, required to avoid ion r…
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
2019
This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 °
Determination of cobalt, copper, iron, nickel and zinc in cemented tungsten carbides with cobalt as a binder by FAAS: Matrix effect control by multiv…
1997
A new approach for the determination of cobalt, copper, iron, nickel and zinc in cemented tungsten carbides with cobalt as a binder by flame atomic absorption spectrophotometry (FAAS) is reported. Real samples were dissolved in phosphoric, hydrochloric and nitric acid. PTFE bomb or alternatively small amounts of HF were used for the enhancement of the recovery of the elements investigated. Synthetic samples were used for interference studies. Multiple linear regression was applied for the control of matrix effects and it proved to be very effective in the search for interfering elements. Using simple acid based standards, all investigated elements could be determined sequentially in a compl…
Interference Cancellation for LoRa Gateways and Impact on Network Capacity
2021
In this paper we propose LoRaSyNc (LoRa receiver with SyNchronization and Cancellation), a second generation LoRa receiver that implements Successive Interference Cancellation (SIC) and time synchronization to improve the performance of LoRa gateways. Indeed, the chirp spread spectrum modulation employed in LoRa experiences very high capture probability, and cancelling the strongest signal in case of collisions can significantly improve the cell capacity. An important feature of LoRaSyNc is the ability to track the frequency and clock drifts between the transmitter and receiver, during the whole demodulation of the interfered frame. Due to the use of low-cost oscillators on end-devices, a s…