Search results for " contact"
showing 10 items of 491 documents
Low Conductive Electrodeposited Poly(2,5-dimethoxyaniline) as a Key Material in a Double Lateral Heterojunction, for Sub-ppm Ammonia Sensing in Humid…
2019
We present a new device called a double lateral heterojunction (DLH) as an ammonia sensor in humid atmosphere. It combines polyaniline derivatives in their poor conducting state with a highly conductive molecular material, lutetium bisphthalocyanine, LuPc2. Polyaniline and poly(2,5-dimethoxyaniline) are electrodeposited on ITO interdigitated electrodes, leading to an original device that can be obtained only by electrochemistry and not by other solution processing techniques. Both polymers lead to highly conducting materials that require a neutralization step before their coverage by LuPc2. While the device based on polyaniline shows ohmic behavior, the nonlinear I- V characteristics of the…
High performance p-type segmented leg of misfit-layered cobaltite and half-Heusler alloy
2015
In this study, a segmented p-type leg of doped misfit-layered cobaltite Ca_(2.8)Lu_(0.15)Ag_(0.05)Co_4O_(9+δ) and half-Heusler Ti_(0.3)Zr_(0.35)Hf_(0.35)CoSb_(0.8)Sn_(0.2) alloy was fabricated and characterized. The thermoelectric properties of single components, segmented leg, and the electrical contact resistance of the joint part were measured as a function of temperature. The output power generation characteristics of segmented legs were characterized in air under various temperature gradients, ΔT, with the hot side temperature up to 1153 K. At ΔT ≈ 756 K, the maximum conversion efficiency reached a value of ∼5%, which is about 65% of that expected from the materials without parasitic l…
An automated procedure for computing the packing properties of dense and locked sands by image analysis of thin sections
2014
The macroscopic mechanical behaviour of dense sands originates to a great extent from their microstructural characteristics such as the coordination number, the grain contact and the packing density indexes. The study of intergranular contacts and the reckoning of these indexes may be carried out on planar images of the grains either by means of time-consuming visual inspection assisted by CAD or by automatic image analysis. An innovative method for the automatic determination of microstructural characteristics of sands based on image analysis of thin section is proposed. Tests performed on a locked sand show that the proposed method is much more effective, convenient and faster than the us…
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
2019
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 degrees C form Ohmic contacts on moderately n-type doped 3C-SiC (N-D similar to 1 x 10(17) cm(-3)), with a specific contact resistance of 3.7 x 10(-3) Omega cm(2). The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N-A similar …
Silicon quantum point contact with aluminum gate
2000
Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and A…
Modeling and parameter identification of crystalline silicon photovoltaic devices
2011
In this paper the physical correctness of the standard single-exponential (one-diode) model of crystalline-Si photovoltaic devices is examined. In particular, we focus on the shunt current. I-V curves of in situ illuminated polycrystalline-Si photovoltaic modules are measured, and based on these measurements, we extract the shunt current. There is a certain voltage range in which the shunt current shows an Ohmic-like behavior, but the value of the resistance varies with irradiance and the quality of illumination. In addition, the Ohmic behavior takes place at voltages well below the maximum-power point (MPP). At higher voltages, the shunt current drops to negligible values. We conclude that…
Equivalences between refractive index and equilibrium water content of conventional and silicone hydrogel soft contact lenses from automated and manu…
2007
PURPOSE: The purpose of the present study was to develop mathematical relationships that allow obtaining equilibrium water content and refractive index of conventional and silicone hydrogel soft contact lenses from refractive index measures obtained with automated refractometry or equilibrium water content measures derived from manual refractometry, respectively. METHODS: Twelve HEMA-based hydrogels of different hydration and four siloxane-based polymers were assayed. A manual refractometer and a digital refractometer were used. Polynomial models obtained from the sucrose curves of equilibrium water content against refractive index and vice-versa were used either considering the whole range…
Microscopic observations of superficial ultrastructure of unworn siloxane-hydrogel contact lenses by cryo-scanning electron microscopy
2006
The purpose of this study was to analyze three commercial siloxane-hydrogel contact lens materials, lotrafilcon A, balafilcon A, and galyfilcon A, by cryogenic scanning electron microscopy (cryoSEM). The fully hydrated lenses were frozen in slush liquid nitrogen and qualitatively observed in a cryogenic scanning electron microscope. The superficial ultrastructure of the siloxane-hydrogels was observed at the areas where the lens fractured during sample cryogenic preparation. There are qualitative differences among the three examined materials in the complex polymer network structure existing between the outer layer and the underlying polymer. CryoSEM, although destructive, is a useful tool …
Microscopic observation of unworn siloxane-hydrogel soft contact lenses by atomic force microscopy
2006
In the present study, samples of lotrafilcon A, balafilcon A, and galyfilcon A contact lenses were observed by atomic force microscopy (AFM) in tapping mode at areas ranging from 0.25 to 400 m2. Mean roughness (Ra), root-mean-square roughness (Rms) and maximum roughness (Rmax) in nanometers were obtained for the three lens materials at different magnifications. The three contact lenses showed significantly different surface topography. However, roughness values were dependent of the surface area to be analyzed. For a 1 m2 area, statistics revealed a significantly more irregular surface of balafilcon A (Ra = 6.44 nm; Rms = 8.30 nm; Rmax = 96.82 nm) compared with lotrafilcon A (Ra = 2.40 nm; …
Carrier transport mechanism in the SnO(2):F/p-type a-Si:H heterojunction
2011
We characterize SnO(2):F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO2:F/p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for vertical bar V vertical bar< 0:1 V and have a super-linear behavior (power law) for vertical bar V vertical bar < 0:1 V. The structure can be modeled as two diodes back to back connected so that the main current transport mechanisms are due to the reverse current of the diodes. To explain the measured C-V curves, the capacitance of the heterostructure is modeled as the …