Search results for " density"
showing 10 items of 2709 documents
Magnetization relaxation in the flux-creep annealing regime across the second magnetization peak of disordered YBa2Cu3O7− crystals
2001
Abstract The relaxation of the irreversible magnetization of disordered YBa 2 Cu 3 O 7− x crystals measured in the “flux-creep annealing” regime reveals that across the second magnetization peak (SMP) the barriers against flux motion remain finite at low current densities, which supports the existence of a crossover to a dissipation process involving the plastic deformation of the vortex system. In our experiments, the vortex creep process appears to be exclusively controlled by collective pinning barriers (diverging at low current densities) only below the onset of the SMP, where the vortex system is stable against dislocation formation. The (elastic) collective pinning barriers observed f…
Disorder-induced vibrational anomalies from crystalline to amorphous solids
2021
The origin of boson peak -- an excess of density of states over Debye's model in glassy solids -- is still under intense debate, among which some theories and experiments suggest that boson peak is related to van-Hove singularity. Here we show that boson peak and van-Hove singularity are well separated identities, by measuring the vibrational density of states of a two-dimensional granular system, where packings are tuned gradually from a crystalline, to polycrystals, and to an amorphous material. We observe a coexistence of well separated boson peak and van-Hove singularities in polycrystals, in which the van-Hove singularities gradually shift to higher frequency values while broadening th…
Interfacial tension of the isotropic-nematic interface in suspensions of soft spherocylinders.
2005
The isotropic to nematic transition in a system of soft spherocylinders is studied by means of grand canonical Monte Carlo simulations. The probability distribution of the particle density is used to determine the coexistence density of the isotropic and the nematic phases. The distributions are also used to compute the interfacial tension of the isotropic--nematic interface, including an analysis of finite size effects. Our results confirm that the Onsager limit is not recovered until for very large elongation, exceeding at least L/D=40, with L the spherocylinder length and D the diameter. For smaller elongation, we find that the interfacial tension increases with increasing L/D, in agreem…
Inhibition of the detrimental double vortex-kink formation in thick YBa2Cu3O7films with BaZrO3nanorods
2013
We investigated the temperature (T) variation of the normalized magnetization relaxation rate S and of the corresponding normalized vortex-creep activation energy U* = T/S for YBa2Cu3O7 films containing BaZrO3 nanorods, with the external magnetic field H oriented perpendicular to the film surface. It was found that by increasing the film thickness and using nanodot decorated substrates the high-T S(T) maximum appearing at low H is substituted by a minimum in S(T). As revealed by the analysis of the current density dependence of U*, this behaviour is due to the inhibition of vortex excitations involving double vortex-kinks and superkinks formation in the investigated thick films, owing to th…
Role of top and bottom interfaces of a Pt/Co/AlOx system in Dzyaloshinskii-Moriya interaction, interface perpendicular magnetic anisotropy, and magne…
2017
We investigate the role of top and bottom interfaces in inversion symmetry-breaking Pt/Co/AlOx systems by inserting ultra-thin Cu layers. Wedge-type ultrathin Cu layers (0-0.5 nm) are introduced between Pt/Co or Co/AlOx interfaces. Interface sensitive physical quantities such as the interfacial Dzyaloshinskii-Moriya interaction (iDMI) energy density, the interfacial perpendicular magnetic anisotropy (iPMA), and the magneto-optical Kerr effects (MOKE) are systematically measured as a function of Cu-insertion layer thickness. We find that the Cu-insertion layer in the bottom interface (Pt/Co) plays a more important role in iDMI, PMA, and MOKE. In contrast, the top interface (Co/AlOx) noticeab…
Electrical switching of perpendicular magnetization in a single ferromagnetic layer
2020
We report on the efficient spin-orbit torque (SOT) switching in a single ferromagnetic layer induced by a new type of inversion asymmetry, the composition gradient. The SOT of 6- to 60-nm epitaxial FePt thin films with a $L{1}_{0}$ phase is investigated. The magnetization of the FePt single layer can be reversibly switched by applying electrical current with a moderate current density. Different from previously reported SOTs which either decreases with or does not change with the film thickness, the SOT in FePt increases with the film thickness. We found the SOT in FePt can be attributed to the composition gradient along the film normal direction. A linear correlation between the SOT and th…
Glass transition in confined geometry.
2010
Extending mode-coupling theory, we elaborate a microscopic theory for the glass transition of liquids confined between two parallel flat hard walls. The theory contains the standard MCT equations in bulk and in two dimensions as limiting cases and requires as input solely the equilibrium density profile and the structure factors of the fluid in confinement. We evaluate the phase diagram as a function of the distance of the plates for the case of a hard sphere fluid and obtain an oscillatory behavior of the glass transtion line as a result of the structural changes related to layering.
Dynamic response of thin-film semiconductors to AC voltage perturbations
2012
A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intende…
Capacitance study of thin film SnO2:F/p-type a-Si:H heterojunctions
2011
Abstract We characterized SnO 2 :F/p-type a-Si:H heterojunctions by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature to determine the junction parameters. Samples with circular geometry and different diameters were characterized. The current scales with the junction area, and the current density J as a function of the voltage V is a slightly asymmetric curve with a super-linear behaviour (cubic law) for high voltages. Using a transmission line model valid for devices with circular geometry, we studied the effects of the SnO 2 :F resistivity on the measured capacitance when the SnO2:F layer works as an electrical contact. The measured C-V curve allows us t…
Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy
2010
Trabajo presentado a la 30th International Conference on the Physics of Semiconductors, celebrada en Seul (Korea) del 25 al 30 de Julio de 2010.