Search results for " gallium"

Spatial inhomogeneities and defect structures in CIGS and CIS materials: An ab-initio based Monte Carlo study

2011

The chalcopyrite semiconductors CuIn 1−x Ga x Se 2 (CIGS) and CuInSe 2 (CIS) are excellent materials for high efficiency and low cost thin-film solar cells. This is due to the effective absorption of the solar spectrum and the inherent resilience to defects and composition fluctuations. Although the CIGS and CIS material in solar cells is highly inhomogeneous and exhibits a lot of different defects, the cell efficiencies are exceptionally high. If single crystalline absorbers are used, efficiencies are lower. Therefore, studying spatial inhomogeneities and defect structures is of great importance for understanding what supports and what diminishes the efficiency and robustness of the cells.…

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

2007

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …

Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

1999

Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…

Photovoltaic module characteristics from CIGS solar cell modelling

2013

We describe our approach to the task of modelling, both at single cell structure and complete module levels, during the solar cell technology development process. This can give very helpful indications, in terms of global photovoltaic module characteristics, for the assessment of intermediate research results and planning of further experiments. We make reference specifically to the fabrication of thin film CIGS solar cells by means of single-step electrodeposition, a technique which appears fairly easy and low-cost but, at the same time, can lead to quite different structural and electrical properties.

Frequency influence on the hot-electron noise reduction in GaAs operating under periodic signals

2008

A Monte Carlo study of the role of the frequency on the hot-electron intrinsic noise reduction in an n-type GaAs bulk driven by two mixed cyclostationary electric fields is presented. Previous numerical results showed the possibility to reduce the diffusion noise under specific wave-mixing conditions. In this work the variations of the noise properties are investigated by computing and integrating the spectral density of the velocity fluctuations. We found that the effect of reduction of the noise level due to the addition of a second field at twice frequency is almost independent of the frequency.

Spectroscopy of an optical excited Ga doped SiO2 surface

2007

Abstract We present the first spectroscopical analysis of the Ga/SiO2 surface interaction in hot environment. This interaction gives rise to inclusions of Ga atoms inside the silica matrix that produce structural changes and modify the SiO2 optical characteristics. This paper discusses both the time- and the frequency-resolved spectra of the fluorescence emission following UV pulsed laser excitation of the so “doped” silica in the range 15,000–28,000 cm−1. The investigation is completed by the electron paramagnetic resonance (EPR) spectra of two high-purity synthetic silica samples of commercial origin after thermal treatment in presence and in absence of a Ga atmosphere.

Electrochemical deposition of different semiconductors for application in solar cells

2011

High accuracy Raman measurements using the Stokes and anti-Stokes lines

1997

We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applie…

Synthesis and study of new precursors for bimodal optic/PET or optic/SPECT imaging

2014

This thesis was performed at the Institut de Chimie Moléculaire de d’Université de Bourgogne (France) and in the Département de chimie de l’Université de Sherbrooke (Québec). The aim of this work was to design new BODIPY derivatives in order to obtain optimal properties for in vivo bimodal optical/PET or SPECT imaging. The modifications concern the hydrosolubilisation of these organic dyes, as well as the shifting of the absorption and emission bands toward the therapeutic window, where the light is less attenuated by biological tissues. Solutions allowing the bioconjugation of BODIPY on a bombesin derivative, a peptide which targets receptors surexpressed in tumor cells, were also investig…

Fabrication of CZTSe/CIGS Nanowire Arrays by One-Step Electrodeposition for Solar-Cell Application

2021

The paper reports some preliminary results concerning the manufacturing process of CuZnSnSe (CZTSe) and CuInGaSe (CIGS) nanowire arrays obtained by one-step electrodeposition for p-n junction fabrication. CZTSe nanowires were obtained through electrodeposition in a polycarbonate membrane by applying a rectangular pulsed current, while their morphology was optimized by appropriately setting the potential and the electrolyte composition. The electrochemical parameters, including pH and composition of the solution, were optimized to obtain a mechanically stable array of nanowires. The samples were characterized by scanning electron microscopy, Raman spectroscopy, and energy-dispersion spectros…