Search results for " memory"
showing 10 items of 1351 documents
Magnetic skyrmions: from fundamental to applications
2016
In this topical review, we will discuss recent advances in the field of skyrmionics (fundamental and applied aspects) mainly focusing on skyrmions that can be realized in thin film structures where an ultrathin ferromagnetic layer (<1 nm) is coupled to materials with large spin-orbit coupling. We review the basic topological nature of the skyrmion spin structure that can entail a stabilization due to the chiral exchange interaction present in many multilayer systems with structural inversion asymmetry. The static spin structures and the dynamics of the skyrmions are also discussed. In particular, we show that skyrmions can be displaced with high reliability and efficiency as needed for t…
Neutron-induced soft errors in advanced Flash memories
2008
Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.
Chiral Magnetic Domain Wall and Skyrmion Memory Devices
2021
In the chapter, we have reviewed the fundamental physics for designing magnetic domain wall memories, especially domain wall racetrack memories. An overview of how the racetrack has been functionally improved and the fundamental physics behind the operating mechanism has developed is shown. Material wise, the design of the racetrack has changed from using in-plane magnetic materials to out-of-plane magnetic materials. The process of changing the material design resulted in new physics such as the spin-orbit torques (SOTs) and the Dzyaloshinskii-Moriya interaction (DMI) which resulted in domain wall motion with higher efficiency and stability. The SOT is the main mechanism in moving the doma…
Generation of two-mode quantum states of light with timing controllable memories
2020
We created and experimentally verified two-mode entangled states of light, α|0,1⟩ + βe*+|1,0⟩, by means of two phase-sensitive optical quantum memories. The release timing of each optical mode can be independently controlled for up to 400 ns.
Traces of errors due to single ion in floating gate memories
2008
Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage of all those FGs interested by its track will be degraded.
Effect of Ion Energy on Charge Loss From Floating Gate Memories
2008
Heavy ions typical of the space environment have energies which exceed by orders of magnitude those available at particle accelerators. In this paper we are irradiating state of the art floating gate memories by using both a medium energy (SIRAD) and a high energy (RADEF) facilities. The corruption of stored information decreases when increasing ion energy. The proposed model deals with the broader track found for higher energy ions. Implications for testing procedures and for reliability considerations are discussed.
Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories
2010
Heavy ion single-event effect (SEE) measurements and total ionizing dose (TID) response for Micron Technology single-level cell 1, 2, 4, 8 Gb commercial NAND flash memory and multi-level cell 8, 16, 32 Gb are reported. The heavy ion measurements were extended down to LET 0.1 MeV-cm2/mg. Scaling effects in SEE and TID response are discussed. Floating gate bit error upset cross section does not scale with feature size at high LETs, except for single-level cell 8 Gb device which is built with 51 nm processes. The threshold LET does not change with scaling. Charge pump TID degradation and standby current improves with scaling. In general, the effect of radiation is either unchanged or is less s…
Direct evidence of secondary recoiled nuclei from high energy protons
2008
The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions. © 2006 IEEE.
Observation of high-purity single photons hopping between optical cavities
2014
We experimentally demonstrate high-purity single photons hopping coherently between coupled optical cavities. The system shows high performance also as a controllable single-photon source, which emits single photons with a negative Wigner function.
A theory for long-memory in supply and demand
2004
Recent empirical studies have demonstrated long-memory in the signs of orders to buy or sell in financial markets [2, 19]. We show how this can be caused by delays in market clearing. Under the common practice of order splitting, large orders are broken up into pieces and executed incrementally. If the size of such large orders is power law distributed, this gives rise to power law decaying autocorrelations in the signs of executed orders. More specifically, we show that if the cumulative distribution of large orders of volume v is proportional to v to the power -alpha and the size of executed orders is constant, the autocorrelation of order signs as a function of the lag tau is asymptotica…