Search results for " semiconductor"

Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

2016

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.

Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

1997

Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…

Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

2003

Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law. Peer reviewed

Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter

2021

In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …

2015

Electrically detected magnetic resonance (EDMR) is a commonly used technique for the study of spin-dependent transport processes in semiconductor materials and electro-optical devices. Here, we present the design and implementation of a compact setup to measure EDMR, which is based on a commercially available benchtop electron paramagnetic resonance (EPR) spectrometer. The electrical detection part uses mostly off-the-shelf electrical components and is thus highly customizable. We present a characterization and calibration procedure for the instrument that allowed us to quantitatively reproduce results obtained on a silicon-based reference sample with a “large-scale” state-of-the-art instru…

Efficiency comparison between SiC- and Si-based active neutral-point clamped converters

2015

This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide power-devices is compared with the efficiency of an active neutral-point clamped converter built up with silicon power-devices, under a particular operating mode and a particular selection of devices. Firstly, overall losses of both converters are estimated. Then, experimental tests are carried out to measure their overall losses and efficiency. Finally, experimental results are compared with the estimations to support the analysis. The efficiency of the SiC converter is hig…

High Resolution X-Ray Spectroscopy with Compound Semiconductor Detectors and Digital Pulse Processing Systems

2012

The advent of semiconductor detectors has revolutionized the broad field of X-ray spectroscopy. Semiconductor detectors, originally developed for particle physics, are now widely used for X-ray spectroscopy in a large variety of fields, as X-ray fluorescence analysis, X-ray astronomy and diagnostic medicine. The success of semiconductor detectors is due to several unique properties that are not available with other types of detectors: the excellent energy resolution, the high detection efficiency and the possibility of development of compact detection systems. Among the semiconductors, silicon (Si) detectors are the key detectors in the soft X-ray band (15 keV) and will continue to be the c…

Hard X-Ray Response of Pixellated CdZnTe Detectors

2009

In recent years, the development of cadmium zinc telluride (CdZnTe) detectors for x-ray and gamma ray spectrometry has grown rapidly. The good room temperature performance and the high spatial resolution of pixellated CdZnTe detectors make them very attractive in space-borne x-ray astronomy, mainly as focal plane detectors for the new generation of hard x-ray focusing telescopes. In this work, we investigated on the spectroscopic performance of two pixellated CdZnTe detectors coupled with a custom low noise and low power readout application specific integrated circuit (ASIC). The detectors (10x10x1 and 10x10x2 mm3 single crystals) have an anode layout based on an array of 256 pixels with a …

Doping dependence of spin dynamics of drifting electrons in GaAs bulks

2010

We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing the lifetimes and depolarization lengths as a function of the doping density in the range 10^{13} - 10^{16} cm^{-3}, for differ…

Supramolecular Order of Solution-Processed Perylenediimide Thin Films

2011

N,N ′ -1 H ,1 H -perfl uorobutyl dicyanoperylenecarboxydiimide (PDIF-CN 2 ), a soluble and air stable n-type molecule, undergoes signifi cant reorganization upon thermal annealing after solution deposition on several substrates with different surface energies. Interestingly, this system exhibits an exceptional edge-on orientation regardless of the substrate chemistry. This preferential orientation is rationalized in terms of strong intermolecular interactions between the PDIF-CN 2 molecules. The presence of a pronounced π– π stacking is confi rmed by combining near-edge X-ray absorption fi ne structure spectroscopy (NEXAFS), dynamic scanning force microscopy (SFM) and surface energy measure…