Search results for " semiconductor"

Growth and photo-electrochemical behaviour of Cu2O nanowires

2008

Thin Films of Semiconductors for Flexible Solar Cells: Electrochemical Deposition and Characterization

2011

Characterization of Thin Passive Film-Electrolyte Junctions.The Amorphous Semiconductor (a-SC) Schottky Barrier Approach

2016

The knowledge of the solid-state properties of passive film is a preliminary task for a full understanding of the electron and ion transfer processes at the metal/oxide and oxide/electrolyte interface. Both processes are of paramount importance in determining the mechanism of film growth and dissolution as well as in determining the nature of the breakdown during the growth of anodic oxide films or the onset of generalized or localized corrosion process (1-2). With very few exceptions, it is a common belief, that most of anodic oxide films, grown on metals and alloys in aqueous solutions, display a semiconducting or insulating behaviour. It is also very well known that in many cases the ini…

Fabbricazione elettrochimica e caratterizzazione di materiali nanostrutturati

2010

A critical analysis of the theory of amorphous semiconductor Schottky barrier for oxides

2014

Nanochemistry Aspects of Titania in Dye Sensitized Solar Cells

2009

We analyze the main nanochemistry factors affecting photovoltaic performance in TiO2 employed as wide bandgap semiconductor in dye-sensitized solar cells (DSCs). What is the best morphology of the oxide? Which processes yield the required structures? Finally, putting the discussion in the context of the rapid evolution of photovoltaic technologies, we argue that new titania nanostructures will form the basic component of second-generation solar modules based on dye solar cells.

Investigation on Cascode Devices for High Frequency Electrical Drives Applications

2019

In the last years a widespread development in the market of electrical drives employing high-speed electrical machines has occurred in various industrial fields, due to the extremely high power density that can be reached. Nevertheless, to maintain output power quality without using bulky filtering networks, DC-AC converters should be controlled by means of higher PWM switching frequencies. New switching device technologies, such as Field Effect Transistors based on SiC and GaN, are therefore gathering momentum in order to comply with the higher working frequencies. To operate under high frequencies and at the same time at high voltage levels, alternative circuital configurations for switch…

Low-cost high-haze films based on ZnO nanorods for light scattering in thin c-Si solar cells

2015

Light scattering from ZnO nanorods (NR) is investigated, modeled, and applied to a solar cell. ZnO NR (120-1300 nm long, 280-60 nm large), grown by low-cost chemical bath deposition at 90 degrees C, exhibit diffused-to-total transmitted light as high as 70% and 30% in the 400 and 1000 nm wavelength range, respectively. Data and scattering simulation show that ZnO NR length plays a crucial role in light diffusion effect. A transparent ZnO NR film grown on glass and placed on top of a 1 mu m thick c-Si solar cell is shown to enhance the light-current conversion efficiency for wavelengths longer than 600 nm. (C) 2015 AIP Publishing LLC.

High accuracy Raman measurements using the Stokes and anti-Stokes lines

1997

We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applie…

Luminescence properties of III-V multi-junctions solar cells

2012

The recent achievement of multi-junctions solar cells, based on III-V semiconductors, exceeding 43% efficiency, has stimulated a rapid growth of concentration photovoltaic (CPV) technology. The large efficiency of these cells is based on the matching between the semiconductors band gap and the solar spectrum and the capability of working under concentrated illumination, up to ~1000 suns. The research pays, therefore, attention to investigate in detail the mechanisms that affect the conversion efficiency, such as the non radiative losses that increase the cell temperature thus favoring the electron-hole (e-h) recombination. With the aim to clarify the performances of these III-V cells, here …