Search results for " semiconductor"
showing 10 items of 332 documents
The origin of slow electron recombination processes in dye-sensitized solar cells with alumina barrier coatings
2004
We investigate the effect of a thin alumina coating of nanocrystalline TiO2 films on recombination dynamics of dye-sensitized solar cells. Both coated and uncoated cells were measured by a combination of techniques: transient absorption spectroscopy, electrochemical impedance spectroscopy, and open-circuit voltage decay. It is found that the alumina barrier reduces the recombination of photoinjected electrons to both dye cations and the oxidized redox couple. It is proposed that this observed retardation can be attributed primarily to two effects: almost complete passivation of surface trap states in TiO2 that are able to inject electrons to acceptor species, and slowing down by a factor of…
Potential application of some wide band gap materials for UV dosimetry
2005
Properties of some wide band gap materials–natural and CVD diamonds – have been studied for their potential application in UV dosimetry, using methods of optically stimulated luminescence and thermoluminescence. The observed properties are compared with those of the previously studied AlN ceramics. From the OSL excitation spectra, it follows that spectral sensitivity of the studied materials falls mainly into the UVC range, OSL and TL emission spectra are located within the visible light region, thus suitable for usual photodetectors. OSL stimulation spectra of the studied materials have a continuous character and are located in a broad visible/near infrared spectral region implying that th…
Effect of structural and compositional inhomogeneities on spin-glass transition in Hg1−x−yCrxMnySe crystals
2004
Abstract We report experimental results on the growth of Hg 1 −x−y Cr x Mn y Se crystals and their magnetic susceptibility χ ( T ) in dependence on the crystal structure and composition. It was found that the crystals with the Mn composition y =0.01–0.08 exhibit the spin-glass transition temperature T g =100–110 K. An increase of y value leads to the saturation of the χ max and T g characteristics in the composition ranges of y >0.06 and y >0.02, respectively. This phenomenon is explained as a result of phase-separated magnetic behavior caused by the formation of HgCr 2 Se 4 inclusions and textures.
Research data supporting the paper "Tuning the effective spin-orbit coupling in molecular semiconductors"
2017
We here present the data underlying the paper "Tuning the effective spin-orbit coupling in molecular semiconductors" accepted at Nature Communications on 24 February 2017. For contributions of the authors to the data and experimental details, please refer to the original paper.
Nonlinear dependence on temperature and field of electron spin depolarization in GaAs semiconductors
2009
In this work the influence of temperature and drift conditions on the electron spin relaxation in lightly doped n-type GaAs bulk semiconductors is investigated. The electron transport, including the evolution of the spin polarization vector, is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium. Electron-spin states in semiconductor structures relax by scattering with imperfections, other carriers and phonons. Spin relaxation lengths and times are computed through the D'yakonov-Perel process since this is the more relevant spin relaxation mechanism in the regime of interest (10 < T < 300 K). The decay of the…
Doping dependence of spin lifetime of drifting electrons in GaAs bulks
2010
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing the lifetimes and depolarization lengths as a function of the doping density in the range 10^{13} - 10^{16} cm^{-3}, for differ…
Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
2006
We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.
Layout influence on microwave performance of graphene field effect transistors
2018
The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S -parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gate-length space which maximises the microwave performance.
An Approach on the Hydrogen Absorption in Carbon Black after Gamma Irradiation
2013
In this work, different samples of an industrial carbon black are used to study the hydrogen intake from an over pres-surized atmosphere and its changes due to alteration of its level of crystallinity produced by ¿-irradiation. The monitor-ing of the hydrogen adsorption was made by means of thermogravimetric analysis and by measurements of some elec-trical parameters as the Seebeck coefficient. X-ray diffraction shows that the irradiation diminishes the level of crystal-line perfection. These results show interesting possibilities to use carbon black as cheap hydrogen absorbers.
Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors
2022
SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with…