Search results for "-e"

showing 10 items of 9657 documents

Enabling partially reconfigurable IP cores parameterisation and integration using MARTE and IP-XACT

2012

International audience; This paper presents a framework which facilitates the parameterization and integration of IP cores into partially reconfigurable SoC platforms, departing from a high-level of abstraction. The approach is based in a Model-Driven Engineering (MDE) methodology, which exploits two widely used standards for Systems-on-Chip specification, MARTE and IP-XACT. The presented work deals with the deployment level of the MDE approach, in which the abstract components of the platform are first linked to the lower level IP-XACT counterparts. At this phase, information for parameterization and integration is readily available, and a synthesizable model can be obtained from the gener…

010302 applied physicsEngineeringExploitbusiness.industryEmphasis (telecommunications)02 engineering and technology01 natural sciences020202 computer hardware & architecture[INFO.INFO-ES] Computer Science [cs]/Embedded SystemsSoftware deploymentEmbedded systemIP-XACT0103 physical sciences0202 electrical engineering electronic engineering information engineeringSystem on a chip[INFO.INFO-ES]Computer Science [cs]/Embedded Systems[ INFO.INFO-ES ] Computer Science [cs]/Embedded SystemsbusinessField-programmable gate arrayAbstraction (linguistics)
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Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM

2020

International audience; In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of permanent and temporarily stuck cells, block errors, and single-bit upsets.

010302 applied physicsMaterials science010308 nuclear & particles physicsNuclear engineering01 natural sciencesNeutron temperature[SPI.TRON]Engineering Sciences [physics]/Electronics0103 physical sciences[INFO.INFO-ES]Computer Science [cs]/Embedded SystemsNeutronIrradiation[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsDramBlock (data storage)Dynamic testing2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
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The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges

2017

Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In re…

010302 applied physicsMaterials scienceAcoustics and UltrasonicsCapacitive sensingAnalytical chemistry02 engineering and technologyPlasma021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesSpectral lineSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAtomic layer depositionCrystallinity0103 physical sciencesDeposition (phase transition)plasma modesCapacitively coupled plasmaRadio frequency0210 nano-technologyplasma-enhanced atomic layer deposition
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Rock-salt CdZnO as a transparent conductive oxide

2018

Transparent conducting oxides (TCOs) are widely used in applications from solar cells to light emitting diodes. Here, we show that the metal organic chemical vapor deposition (MOCVD)-grown, rock-salt CdZnO ternary, has excellent potential as a TCO. To assess this compound, we use a combination of infrared reflectance and ultraviolet-visible absorption spectroscopies, together with Hall effect, to determine its optical and electrical transport characteristics. It is found that the incorporation of Zn produces an increment of the electron concentration and mobility, yielding lower resistivities than those of CdO, with a minimum of 1.96 × 10 − 4 Ω · cm for a Zn content of 10%. Moreover, due to…

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)Band gapAnalytical chemistry02 engineering and technologyChemical vapor deposition021001 nanoscience & nanotechnology01 natural scienceslaw.inventionlaw0103 physical sciencesMetalorganic vapour phase epitaxy0210 nano-technologyTernary operationAbsorption (electromagnetic radiation)Deposition (law)Transparent conducting filmLight-emitting diodeApplied Physics Letters
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Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations

2016

Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…

010302 applied physicsMaterials science[PHYS.NUCL]Physics [physics]/Nuclear Theory [nucl-th]Schottky barriercu(InDopingMetals and Alloys02 engineering and technologySurfaces and InterfacesInterface[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]021001 nanoscience & nanotechnology01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCrystallographyGa)Se 2MoSe2/Mo(110)Lattice (order)0103 physical sciencesMaterials ChemistryThin film solar cellThin-film solar cell0210 nano-technologySchottky barrier
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Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

2019

We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…

010302 applied physicsMaterials sciencebusiness.industryGallium nitrideHeterojunction01 natural sciencesSettore ING-INF/01 - ElettronicaElectronic Optical and Magnetic Materialslaw.inventionchemistry.chemical_compoundchemistrylawPhase (matter)0103 physical sciencesElectrodeOptoelectronicsNanorodChemical-bath deposition (CBD) contact injection current spreading length zinc oxide (ZnO) nanorods ZnO/GaN-based light-emitting diodes (LEDs) ZnO/GaN heterostructures.Electrical and Electronic EngineeringbusinessWurtzite crystal structureLight-emitting diodeDiode
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2020

Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of nonequilibrium electronic processes, transient states in chemical reactions, or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectron diffraction for electronic, chemical, and structural analyses requires few 10 fs soft X-ray pulses with some 10 meV spectral resolution, which are currently available at high repetition rate free-electron lasers. We have constructed and optimized a versatile setup commissioned at FLASH/PG2 that c…

010302 applied physicsMicroscopePhotonMaterials scienceResolution (electron density)Free-electron laserLaser01 natural sciences010305 fluids & plasmaslaw.inventionMomentumTime of flightlaw0103 physical sciencesAtomic physicsInstrumentationUltrashort pulseReview of Scientific Instruments
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The Grain Boundary Wetting Phenomena in the Ti-Containing High-Entropy Alloys: A Review

2021

In this review, the phenomenon of grain boundary (GB) wetting by melt is analyzed for multicomponent alloys without principal components (also called high-entropy alloys or HEAs) containing titanium. GB wetting can be complete or partial. In the former case, the liquid phase forms the continuous layers between solid grains and completely separates them. In the latter case of partial GB wetting, the melt forms the chain of droplets in GBs, with certain non-zero contact angles. The GB wetting phenomenon can be observed in HEAs produced by all solidification-based technologies. GB leads to the appearance of novel GB tie lines Twmin and Twmax in the multicomponent HEA phase diagrams. The so-cal…

010302 applied physicsPhase transitionMaterials scienceMining engineering. MetallurgyHigh entropy alloysMetals and AlloysTN1-997Titanium alloyThermodynamics02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesphase transitionsContact anglePhase (matter)titanium alloys0103 physical sciencesgrain boundary wettingGeneral Materials ScienceGrain boundaryWetting0210 nano-technologyphase diagramsPhase diagramhigh-entropy alloys
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Accumulation of positrons from a LINAC based source

2020

International audience; The GBAR experiment aims to measure the gravitational acceleration of antihydrogen H̅. It will use H̅+ ions formed by the interaction of antiprotons with a dense positronium cloud, which will require about 1010 positrons to produce one H̅+. We present the first results on the positron accumulation, reaching 3.8±0.4×108 e+ collected in 560 s.

010302 applied physicsPhysicsMeasure (physics)General Physics and Astronomy02 engineering and technology021001 nanoscience & nanotechnologyGravitational acceleration01 natural sciencesLinear particle acceleratorPositroniumNuclear physicsPositronPositron plasma; Positron accumulation; Antimatter; Penning-Malmberg trap; Greaves-Surko trap; GBAR[PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph]AntiprotonAntimatter0103 physical sciences[PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex]Physics::Accelerator PhysicsPhysics::Atomic Physics0210 nano-technologyAntihydrogenComputingMilieux_MISCELLANEOUSActa Physica Polonica A
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Two-neutron correlations at small relative momenta in ^40Ar + ^197Au collisions at 60 MeV/nucleon

2000

Two-neutron correlation functions are measured in the 40Ar + 197Au reaction at 60 MeV/nucleon to study the space-time characteristics of neutron emitting sources. The source temperatures and velocities are deduced by fitting the single-neutron energy spectra with a three-source model. A comparison of the correlation data with the predictions of the model of moving sources and with the dynamical Landau-Vlasov model suggests the relevance of a multisource description. Particular care has been paid to the influence of the relative source abundance on the shape of the correlation function.

010302 applied physicsPhysicsNuclear and High Energy Physics010308 nuclear & particles physicsNuclear Theory[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]7. Clean energy01 natural sciencesSpectral lineNuclear physicsCorrelation function (statistical mechanics)0103 physical sciencesnuclear physics; heavy ions; neutron interferometryNeutronNucleonNuclear Experiment
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